Concept

Flyback diode

Related publications (37)

RF MEMS power sensors for ultra-low power wake-up circuit applications

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Wolfgang Amadeus Vitale

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Frequency doubled 1534 nm laser system for potassium laser cooling

Jean-Philippe Brantut, Guillaume Stern

We demonstrate a compact laser source suitable for trapping and cooling potassium. By frequency doubling a fiber laser diode at 1534nm in a waveguide, we produce 767nm laser light. A current modulation of the diode allows us to generate the two required fr ...

2010

Active Self-Switching Methods for Emerging Monolithic Bidirectional Switches Applied to Diode-Less Converters

Alfred Rufer, Daniel Siemaszko

This paper presents a recently introduced switching principle for emerging monolithic bidirectional devices. Based on the hypothesis that those switches may overcome conventional diode type solutions in power converters, an active self-switching process be ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

Unique carbon-nanotube field-effect transistors with asymmetric source and drain contacts

Nicola Marzari, Ho Ling Li

We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...

2008

Enhanced spontaneous emission in a photonic-crystal light-emitting diode

Laurent Balet, Blandine Alloing

We report direct evidence of enhanced spontaneous emission in a photonic-crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injecte ...

American Institute of Physics2008

A new single photon avalanche diode in CMOS high-voltage technology

Radivoje Popovic

we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Solar blind AlGaN photodetectors with a very high spectral selectivity

Nicolas Grandjean, Mauro Mosca

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), a ...

2006

Couche mince semi-conductrice de GaInN, son procédé de préparation, diode électroluminescente comprenant cette couche et dispositif d'éclairage = Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device

Nicolas Grandjean

Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. M ...

2003

Asymmetrical multilevel inverter for large induction machine drives

Alfred Rufer

This paper describes some techniques to improve the output waveform quality of multilevel inverts fed-indction machines. The investigated topologies are the diode-clamped and series-connection of H-bridges. Thesetechinques are based on an unequal dc-voltag ...

2001

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