In electronics and computing, a soft error is a type of error where a signal or datum is wrong. Errors may be caused by a defect, usually understood either to be a mistake in design or construction, or a broken component. A soft error is also a signal or datum which is wrong, but is not assumed to imply such a mistake or breakage. After observing a soft error, there is no implication that the system is any less reliable than before. One cause of soft errors is single event upsets from cosmic rays.
In a computer's memory system, a soft error changes an instruction in a program or a data value. Soft errors typically can be remedied by cold booting the computer. A soft error will not damage a system's hardware; the only damage is to the data that is being processed.
There are two types of soft errors, chip-level soft error and system-level soft error. Chip-level soft errors occur when particles hit the chip, e.g., when secondary particles from cosmic rays land on the silicon die. If a particle with certain properties hits a memory cell it can cause the cell to change state to a different value. The atomic reaction in this example is so tiny that it does not damage the physical structure of the chip. System-level soft errors occur when the data being processed is hit with a noise phenomenon, typically when the data is on a data bus. The computer tries to interpret the noise as a data bit, which can cause errors in addressing or processing program code. The bad data bit can even be saved in memory and cause problems at a later time.
If detected, a soft error may be corrected by rewriting correct data in place of erroneous data. Highly reliable systems use error correction to correct soft errors on the fly. However, in many systems, it may be impossible to determine the correct data, or even to discover that an error is present at all. In addition, before the correction can occur, the system may have crashed, in which case the recovery procedure must include a reboot.
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A single-event upset (SEU), also known as a single-event error (SEE), is a change of state caused by one single ionizing particle (ions, electrons, photons...) striking a sensitive node in a live micro-electronic device, such as in a microprocessor, semiconductor memory, or power transistors. The state change is a result of the free charge created by ionization in or close to an important node of a logic element (e.g. memory "bit"). The error in device output or operation caused as a result of the strike is called an SEU or a soft error.
Row hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.
Random-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Comprehensive memory safety validation identifies the memory objects whose accesses provably comply with all classes of memory safety, protecting them from memory errors elsewhere at low overhead. We assess the breadth and depth of comprehensive memory saf ...
We perform an error analysis of a fully discretised Streamline Upwind Petrov Galerkin Dynamical Low Rank (SUPG-DLR) method for random time-dependent advection-dominated problems. The time integration scheme has a splitting-like nature, allowing for potenti ...
2024
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In magnetic fusion devices, error field (EF) sources, spurious magnetic field perturbations, need to be identified and corrected for safe and stable (disruption-free) tokamak operation. Within Work Package Tokamak Exploitation RT04, a series of studies hav ...