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The fabrication using silicon micromachining and characterization of an acoustic Lamb wave actuator is presented. The intended use of the device is for mass transport and sensor applications. The device consists of dual interdigitated transducers patterned ...
Using a first-principles approach, we study the incorporation of nitrogen at the Si(001)-SiO2 interface by calculating N Is core-level shifts for several relaxed interface models. The unusually large shift with oxide thickness of the principal peak in phot ...
Wurtzite GaN was grown by gas source molecular beam epitaxy on (0001) sapphire substrates. Taking advantage of the catalytic decomposition of ammonia on the growing surface, high growth rates (>1 mu m/h) were achieved for substrate temperatures ranging bet ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
Interfaces in metal and ceramic composites differ from interfaces in polymer matrix composites inasmuch as: (i) fiber degradation due to chemical reaction with the matrix at processing temperatures is frequent and (ii) bonding at the interface is generally ...
Recently, polymeric carbon nitride (g-C3N4) as a proficient photo-catalyst has been effectively employed in photocatalysis for energy conversion, storage, and pollutants degradation due to its low cost, robustness, and environmentally friendly nature. The ...
Lithography on (100) single-crystal silicon and amorphous silicon is performed by electric-field-enhanced local oxidation of silicon using an atomic force microscope (AFM). Amorphous silicon is used as a negative resist to pattern silicon oxide, silicon ni ...
Very strong coefficients for spontaneous and piezoelectric polarizations have recently been predicted for III-V nitride semiconductors with natural wurtzite symmetry. Such polarizations influence significantly the mechanisms of radiative emissions in quant ...
Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The str ...
