Mihai Adrian IonescuAdrian M. Ionescu is Full Professor at the Swiss Federal Institute of Technology, Lausanne, Switzerland. He received the B.S./M.S. and Ph.D. degrees from the Polytechnic Institute of Bucharest, Romania and the National Polytechnic Institute of Grenoble, France, in 1989 and 1997, respectively. He has held staff and/or visiting positions at LETI-CEA, Grenoble, France and INP Grenoble, France and Stanford University, USA, in 1998 and 1999. Dr. Ionescu has published more than 600 articles in international journals and conferences. He received many Best Paper Awards in international conferences, the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for contributions to the progress in engineering sciences in the domain of electronics. He is the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013. He is a member of the SATW. He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB).
Andras Kis2015− Associate professor, EPFL, STI, Institute of Electrical Engineering (IEL) and Materials Science and Engineering Institute (IMX)
2008−2015 Tenure-track assistant professor at EPFL, School of Engineering (STI), Institute of Electrical Engineering (IEL)
2004−2007 Postdoctoral researcher at the University of California, Berkeley, Physics Department in the group of Prof. Zettl
2000−2003 PhD student at EPFL, Faculty of basic sciences, Institute of physics of complex matter, group of Prof. Forró
1994−1999 MS, Physics, University of Zagreb, Croatia
1994 Baccalaureate, MIOC (Mathematical and Informational Educational Center) high school
Klaus KernKlaus Kern is Professor of Physics at EPFL and Director and Scientific Member at the Max-Planck-Institute for Solid State Research in Stuttgart, Germany. He also is Honorary Professor at the University of Konstanz, Germany. His present research interests are in nanoscale science, quantum technology and in microscopy at the atomic limits of space and time. He holds a chemistry degree and PhD from the University of Bonn and a honorary doctors degree from the University of Aalborg. After his doctoral studies he was staff scientist at the Research Center Jülich and visiting scientist at Bell Laboratories, Murray Hill before joining the Faculty of EPFL in 1991 and the Max-Planck-Society in 1998. Professor Kern has authored and coauthored close to 700 scientific publications, which have received nearly 60‘000 citations. He has served frequently on advisory committees to universities, professional societies and institutions and has received numerous scientific awards and honors, including the 2008 Gottfried-Wilhelm-Leibniz Prize and the 2016 Van‘t Hoff Prize. Prof. Kern has also educated a large number of leading scientists in nanoscale physics and chemistry. During the past twenty-five years he has supervised one hundred PhD students and sixty postdoctoral fellows. Today, more than fifty of his former students and postdocs hold prominent faculty positions at Universities around the world.
Christian EnzChristian C. Enz (M84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB).He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems.He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.
Jürgen BruggerI am a Professor of Microengineering and co-affiliated to Materials Science. Before joining EPFL I was at the MESA Research Institute of Nanotechnology at the University of Twente in the Netherlands, at the IBM Zurich Research Laboratory, and at the Hitachi Central Research Laboratory, in Tokyo, Japan. I received a Master in Physical-Electronics and a PhD degree from Neuchâtel University, Switzerland. Research in my laboratory focuses on various aspects of MEMS and Nanotechnology. My group contributes to the field at the fundamental level as well as in technological development, as demonstrated by the start-ups that spun off from the lab. In our research, key competences are in micro/nanofabrication, additive micro-manufacturing, new materials for MEMS, increasingly for wearable and biomedical applications. Together with my students and colleagues we published over 200 peer-refereed papers and I had the pleasure to supervise over 25 PhD students. Former students and postdocs have been successful in receiving awards and starting their own scientific careers. I am honoured for the appointment in 2016 as Fellow of the IEEE “For contributions to micro and nano manufacturing technology”. In 2017 my lab was awarded an ERC AdvG in the field of advanced micro-manufacturing.
Nicolas GrandjeanNicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.