Semiconductor memory

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as hard disks and CDs which read and wri

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Semiconductor memory cell, array, architecture and device, and method of operating same

Serguei Okhonin

There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of the invention, the memory cell includes two transistors which store complementary data states. That is, the two-transistor memory cell includes a first transistor that maintains a complementary state relative to the second transistor. As such, when programmed, one of the transistors of the memory cell stores a logic low (a binary "0") and the other transistor of the memory cell stores a logic high (a binary "1"). The data state of the two-transistor complementary memory cell may be read and/or determined by sampling, sensing measuring and/or detecting the polarity of the logic states stored in each transistor of complementary memory cell. That is, the two-transistor complementary memory cell is read by sampling, sensing measuring and/or detecting the difference in signals (current or voltage) stored in the two transistors.

2007

Semiconductor memory device and method of operating same

Serguei Okhonin

There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodiment of this aspect of the invention, the memory device and technique for operating that device that minimizes, reduces and/or eliminates the debilitating affects of the charge pumping phenomenon. This embodiment of the present invention employs control signals that minimize, reduce and/or eliminate transitions of the amplitudes and/or polarities. In another embodiment, the present invention is a semiconductor memory device including a memory array comprising a plurality of semiconductor dynamic random access memory cells arranged in a matrix of rows and columns. Each semiconductor dynamic random access memory cell includes a transistor having a source region, a drain region, a electrically floating body region disposed between and adjacent to the source region and the drain region, and a gate spaced apart from, and capacitively coupled to, the body region. Each transistor includes a first state representative of a first charge in the body region, and a second data state representative of a second charge in the body region. Further, each row of semiconductor dynamic random access memory cells includes an associated source line which is connected to only the semiconductor dynamic random access memory cells of the associated row.

2007

Ultra High Voltage Switch for Bidirectional DC-DC Converter Driving Dielectric Elastomer Actuator

Morgan Almanza, Yoan René Cyrille Civet, Yves Perriard, Lucas Pniak

Specific applications, such as dielectric elastomer actuators (DEAs) or electroactive polymers, require to switch voltage levels exceeding the ratings of existing semiconductor devices. In low power application, reversible flyback are widely used to supply DEAs. Lowering the parallel parasitic capacitance of the high voltage switch is important to improve the energy transfer, while it becomes mandatory to increase the output voltage of flyback above 2.5 kV. In this paper, a Pulsed Transformer Gate Driver (PTGD) is used to drive series-connected MOSFET and therefore push the limits from 4.5 kV up to 16 kV. At these high voltage levels, the structure reveals a drastic voltage unbalance related to the transformer interwinding parasitic capacitance. The compensation method proposed to achieve voltage balance only adds few passive components and reduces significantly the additional parallel capacitance of the switch compared to common load side voltage balancing methods. Finally and as proof of concept, a half-bridge bidirectional converter was designed from this switch technology and drove an actual dielectric elastomer actuator at 16 kV.

2020

CS-307: Introduction to multiprocessor architecture

Multiprocessors are a core component in all types of computing infrastructure, from phones to datacenters. This course will build on the prerequisites of processor design and concurrency to introduce the essential technologies required to combine multiple processing elements into a single computer.

CS-119(c): Information, Computation, Communication

L'objectif de ce cours est d'introduire les étudiants à la pensée algorithmique, de les familiariser avec les fondamentaux de l'Informatique et de développer une première compétence en programmation (langage C++).

MICRO-428: Metrology

The course deals with the concept of measuring in different domains, particularly in the electrical, optical, and microscale domains. The course will end with a perspective on quantum measurements, which could trigger the ultimate revolution in metrology.

Computer

A computer is a machine that can be programmed to carry out sequences of arithmetic or logical operations (computation) automatically. Modern digital electronic computers can perform generic sets of

Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named f

Read-only memory

Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device