Concept

Semiconductor memory

Related publications (414)

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects ...

2011

Design and failure analysis of logic-compatible multilevel gain-cell-based DRAM for fault-tolerant VLSI systems

Andreas Peter Burg, Pascal Andreas Meinerzhagen

This paper considers the problem of increasing the storage density in fault-tolerant VLSI systems which require only limited data retention times. To this end, the concept of storing many bits per memory cell is applied to area-efficient and fully logic-co ...

ACM Press2011

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Davide Garetto

The impact of 3D device architecture in aggressively scaled embedded non-volatile memories has been investigated by means of experiments and 3D TCAD simulations. A complete 3D calibration methodology covering DC and transient operating regimes has been int ...

2011

System of nano-silver inkjet printed memory cards and PC card reader and programmer

Alexandru Rusu, Suat Ayoz

This work describes the development of inkjet printed, low-cost memory cards, and complementary pair of memory card reader and card reader/programmer for PCs. This constitutes a complete system that can be used for various applications. The memory cards ar ...

Elsevier2011

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

Benchmarking of standard-cell based memories in the sub-VT domain in 65-nm CMOS technology

Andreas Peter Burg, Pascal Andreas Meinerzhagen

In this paper, standard-cell based memories (SCMs) are proposed as an alternative to full-custom sub-VT SRAM macros for ultra-low-power systems requiring small memory blocks. The energy per memory access as well as the maximum achievable throughput in the ...

2011

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011

Alternative Design Methodologies for the Next Generation Logic Switch (invited paper)

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi

Next generation logic switch devices are ex- pected to rely on radically new technologies mainly due to the increasing difficulties and limitations of state-of-the-art CMOS switches, which, in turn, will also require innovative design methodologies that ar ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

MaSM: Efficient Online Updates in Data Warehouses

Anastasia Ailamaki, Manoussos Gavriil Athanassoulis, Radu Ioan Stoica

Data warehouses (DW) have been traditionally optimized for readonly query performance, allowing only offline updates at night, essentially trading off data freshness for performance. The need for 24x7 operations in global markets and the rise of online and ...

2011

Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis

Mihai Adrian Ionescu, Anupama Arun

The crossed junction formed between a multi walled carbon nanotube (MWCNT) and a bundle of single walled carbon nanotube (SWCNT) is investigated. The junction is fabricated by orthogonally assembling the MWCNT and SWCNT by a two-step dielectrophoresis proc ...

2011

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