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Since the end of the last century, Cu damascene integration scheme has been the favoured choice for advanced interconnect technologies. Indeed, due to the lowest Cu bulk resistivity and to it higher resistance to electromigration, performances enhancement ...
This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...
A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...
We present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 ± 7 nm. We have used three plasma chemi ...
The hydrogen sensing characteristics of a single nanotrench fabricated by focused ion beam milling (FIB) in an evaporated palladium microwire are presented. In situ atomic force microscopy (AFM) measurements proved that, in the presence of H2, the trench c ...
The shape and dimensions of an atomic force microscope tip are crucial factors to obtain high resolution images at the nanoscale. When measuring samples with narrow trenches, inclined sidewalls near 90 or nanoscaled structures, standard silicon atomic forc ...