Concept

Metal–semiconductor junction

Related publications (32)

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

Sylvain Dunand, Matthew James Large

Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of ...

2022

In situ work function measurements of W, WO3 nanostructured surfaces

Francisco Sanchez

Surface nanostructuring enables the fabrication of materials with highly desirable properties. Nanostructured tungsten surfaces have potential applications in solar water splitting. Exposing a polished tungsten surface to helium plasma induces various surf ...

ELSEVIER SCIENCE SA2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

2021

Nonempirical hybrid functionals for advanced electronic-structure calculations

Thomas Bischoff

Electronic-structure calculations based on hybrid functionals have emerged as a standard technique used in physics, chemistry, and material science. Despite this success, hybrid functionals have the drawback of containing undetermined parameters. To overc ...

EPFL2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

Edge-contact MoS2 transistors made by thermal scanning probe lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

Two-dimensional materials (2DM) have emerged as potential candidates for low power electronics, optoelectronics, and sensing [1]. However, the chemical and physical processes involved in conventional lithography methods, have shown detrimental effects on 2 ...

2021

Novel Interfacial Characterization and Surface Engineering in Semiconductor Electrodes for Optimized Solar Fuel Production

Yongpeng Liu

Harvesting sunlight, the ultimate renewable power source, in a cost-effective way has been long recognized as a necessary route to meet the global energy challenges. Solar energy can be transformed into electricity by means of photovoltaic devices to suppl ...

EPFL2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

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