Hysteresis | EPFL Graph Search

Hysteresis is the dependence of the state of a system on its history. For example, a magnet may have more than one possible magnetic moment in a given magnetic field, depending on how the field changed in the past. Plots of a single component of the moment often form a loop or hysteresis curve, where there are different values of one variable depending on the direction of change of another variable. This history dependence is the basis of memory in a hard disk drive and the remanence that retains a record of the Earth's magnetic field magnitude in the past. Hysteresis occurs in ferromagnetic and ferroelectric materials, as well as in the deformation of rubber bands and shape-memory alloys and many other natural phenomena. In natural systems it is often associated with irreversible thermodynamic change such as phase transitions and with internal friction; and dissipation is a common side effect. Hysteresis can be found in physics, chemistry, engineering, biology, and economics. It is

A finite element model of the LHC dipole cold mass with hysteretic, non-linear behavior and single turn description

Mirko Pojer

In one of its acceptation, the word quench is synonym of destruction. And this is even more consistent with reality in the case of the Large Hadron Collider dipole magnets, whose magnetic field and stored energy are unprecedented: the uncontrolled transition from the superconducting to the resistive state can be the origin of dramatic events. This is why the protection of magnets is so important, and why so many studies and investigations have been carried out on quench origin. The production, cold testing and installation of the 1232 arc dipole magnets is completed. They have fulfilled all the requirements and the operation reliability of these magnets has already been partially confirmed. From an academic standpoint, nevertheless, the anomalous mechanical behaviour, which was sometimes observed during power tests, has not yet been given a clear explanation. The work presented in this thesis aims at providing an instrument to better understand the reasons for such anomalies, by means of finite element modelling of the cross-section of the dipole cold mass. During the investigation on quench phenomenology and its characterization, a distinction can be done between the two main quench origins during cold test without beam: the local degradation of the conductor and the frictional heating resulting from mechanical disturbances (such as conductor motion under the effects of the Lorentz forces). Concerning the second type, it is illustrated how important a good positioning of the cables is in a magnet cross-section and which is the fundamental role of azimuthal pre-stress. There are numerous studies of the consequences of conductor motion under the effect of electro-magnetic forces and of the loss of pre-stress during energization. However, no model has ever been able to reproduce in detail and predict such phenomena. The present model, developed in ANSYS® environment, was initiated with the idea of representing the real behaviour of an LHC-type dipole coil, by taking into account each turn individually, reproducing the non-linear and hysteretic mechanical behaviour observed on a stack of insulated cables and inserting friction between mating surfaces. The representation of the mechanical complexity of the composite material is certainly one of the originalities of this study. To validate the model, a comparison with elastic modulus measurements, systematically performed in industry, was carried out, both for single layers and for assembled poles. The agreement is certainly worth the effort lavished and justifies the following steps in simulation, which are the modelling of the collaring mechanism and the cool-down process. These are other important and original elements. The last one, in particular, requires progressively changing the mechanical properties of the superconductor, following the temperature profile. This implied some simplifications to comply with the enhanced convergence difficulties, but does not invalidate the goodness of the description and the results obtained. This is a faithful reproduction of a magnet life-cycle, uncommon in this kind of studies.

EPFL2009

Magnetism and metal-organic self-assembly of rare-earth atoms on decoupling layers

Sébastien Reynaud

This thesis presents investigations of magnetic and structural properties of two dimensional metal-organic frameworks and of single atoms, both adsorbed on decoupling layers grown on metal surfaces, with focus on rare earth elements.We first report on a series of attempts at realizing self-assembled metal-organic networks on different decoupling layers, probed by scanning tunneling microscopy. The aim is to produce regular structures with high surface filling factors such that the magnetic properties of the rare earth atoms in the metal-organic networks can be investigated by X-ray ensemble measurements. The combinations of three molecular ligands (QDC, BDA, ZnTPyP) on three insulating layers (MgO, NaCl, graphene) with Tb as rare earth are reported. Of the three decoupling layers, only graphene is found to allow the synthesis of metal-organic structures. We successfully synthesized large islands of a rare earth-QDC coordination complex, with a majority of fivefold coordination of the rare earth atoms. The same structure is reproduced with Dy and Er.X-ray absorption spectroscopy, X-ray magnetic circular and linear dichroism measurements are then carried out on the Dy- and Er-QDC/gr/Ir(111) networks. Compared to single atoms on gr/Ir(111), both Dy and Er change their

4f

occupancy from 4

f^n

4f^{n-1}

and change their easy axis of magnetization. Both species are paramagnetic when incorporated into the metal-organic structure. The last part of the thesis is devoted to the study of Dy, Ho, and Gd on NaCl thin films. All three atoms display

4f

occupancy of the gas phase. The top-Cl adsorption site is determined with scanning tunneling microscopy. The magnetic properties are probed with X-ray absorption spectroscopy, X-ray magnetic circular and linear dichroism. Ho and Gd are paramagnetic. Dy has out-of-plane anisotropy with open hysteresis at non zero magnetic field. However, thermally assisted quantum tunneling of the magnetization prevents remanence at zero field.

EPFL2022

Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films

Andreas Nöth

Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric transducer, stabilizing the transmission at a given predetermined frequency. For reasons such as space economy in hand-held devices, it is of interest to make these TFBARs tunable, so that a single TFBAR is multi-band responsive. This thesis demonstrates for the first time electrically tunable, single-component TFBARs. A theory describing the tuning behavior of dc bias induced acoustic resonances was developed. Then we made the hypothesis that dc bias induced piezoelectric BaxSr1-xTiO3 (BST) thin films – namely, paraelectric, non-piezoelectric films operating under dc bias – can be used to make electrically tunable TFBARs and that the devices can be switched on or off depending on the dc bias state. The devices were then fabricated: We integrated BST lms onto silicon substrates, micromachined the substrate to create the TFBARs and a new type of suspended planar capacitor which were then characterized, analyzed, and modeled, demonstrating successfully the new concept: We developed a theory describing the electrical tuning behavior of the dc bias induced acoustic resonances in paraelectric thin lms in terms of material parameters. The field dependent constitutive piezoelectric equations were derived from the Landau free energy P-expansion by taking the linear and nonlinear electrostrictive terms as well as the background permittivity into account. We considered two modes of excitation for the tuning of the acoustic resonances, namely the thickness excitation (TE) mode and the lateral field excitation (LFE) mode. The tuning behavior of the two types of resonators based on BST thin films was modeled and discussed. For the modeling we calculated the relevant tensor components controlling the tuning of the BST resonators from the available literature data. The fabrication of the membrane-type TFBARs was realized by integrating BST thin films onto silicon substrates and using micromaching technologies. We showed that the developed TFBARs can be switched on or off with a dc bias. At a dc electric field of 615 kV/cm we observed a tuning of -2.4% (-66 MHz) and -0.6% (-16 MHz) for the resonance and antiresonance frequencies of the device, while the resonance frequency at a dc electric field extrapolated to 0 kV/cm was 2.85 GHz. The effective electromechanical coupling factor k2eff of the device increased up to 4.4%. The tuning was non-hysteretic. The Quality-factor (Q-factor) of the device was about 200. The developed micromaching processes for the TFBARs were used to fabricate coplanar BST capacitors on silicon. Micromaching was used to remove the Si substrate under the active area of the device. Comparing this new micromachined coplanar capacitor with conventional non-micromachined capacitors, we demonstrated that the removal of the substrate from the active device area resulted in a reduction of parasitic effects. The micromachined coplanar capacitor showed an increased tunability and a reduced loss tangent in comparison to the non-micromachined capacitor. The micromachined capacitor showed a relative tunability of 37% at a dc electric field of 1100 kV/cm. The loss tangent was 0.08 and 0.06 at zero and maximum dc bias, respectively, at a measurement frequency of 20 GHz. The integration of epitaxial BST thin films on silicon was studied as well because of its potential improvement of the device performance in comparison to devices based on polycrystalline films. Two different electrode/buffer layer systems, YBa2Cu3O7-x (YBCO) / CeO2 / YxZr1-xO2-x/2 (YSZ) and TiN were used for the integration. Epitaxial BST thin films were grown with both structures. For the BST / YBCO / CeO2 / YSZ / Si structure, the BST unit cell was rotated by 45° in the in-plane dimension with respect to the substrate. The BST layer exhibited good structural quality as indicated by a Full Width at Half Maximum (FWHM) of 0.5° of the rocking curve of the BST(002) diffraction peak. For the BST / TiN / Si structure, the BST layer was grown with a cube-on-cube epitaxial relationship on the silicon substrate, thus demonstrating epitaxially grown BST on silicon using conventional bottom electrode that is easily acceptable by the microelectronic industry. However, in this case, the structural quality of the BST layer was reduced in comparison to the BST / YBCO / CeO2 / YSZ / Si structure. The FWHM of the rocking curve of the BST(002) diffraction peak was 2.2°. We established the temperature (T=550 to 600 °C) and pressure (p ≈ 10-7 to 5 × 10-4 Torr) conditions for the growth of epitaxial BST thin films on TiN-buffered Si. At too high temperatures and/or oxygen pressures epitaxial BST thin film growth was impeded due to the oxidation of the TiN layer. By introducing experimental results from the electrical characterization of the micromachined devices with the polycrystalline BST into our developed theory, we could successfully model the tuning behavior of our fabricated TFBARs. The modeling allowed us to de-embed the intrinsic electromechanical properties of a freestanding BST layer. The effect of increasing mechanical load on the tuning performance of the device was modeled and studied experimentally. Under strong mechanical load, the tuning of both resonance and antiresonance frequency was reduced. The effect was attributed to a reduction in the tuning of k2eff of the device and of the sound velocity of the BST layer.

EPFL2009

A finite element model of the LHC dipole cold mass with hysteretic, non-linear behavior and single turn description

Mirko Pojer

EPFL2009

Magnetism and metal-organic self-assembly of rare-earth atoms on decoupling layers

Sébastien Reynaud

4f

occupancy from 4

f^n

4f^{n-1}

4f

EPFL2022

Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films

Andreas Nöth

EPFL2009