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This roadmap article highlights recent advances, challenges and future prospects in studies of the dynamics of molecules and clusters in the gas phase. It comprises nineteen contributions by scientists with leading expertise in complementary experimental a ...
The output obtained from operando X-ray diffraction experiments on Ti-6Al-4V is used to verify the accuracy of four FEM models in predicting the temperature evolution of the solidified domain, the cooling rates of the alpha and beta phases, and the influen ...
With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...
Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...
The complete radiation field pattern of a vertical Hertzian dipole antenna on or above a lossless or low-loss dielectric half-space is studied using a rigorous Sommerfeld formalism. The reflected fields in the air above the interface and the subsurface fie ...
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...
Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were ...
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...
The neutron time-of-flight (n_TOF) facility at the European Laboratory for Particle Physics (CERN) is a pulsed white-spectrum neutron spallation source producing neutrons for two experimental areas: the Experimental Area 1 (EAR1), located 185 m horizontall ...