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The Future Circular Collider (FCC) is the envisioned particle accelerator to be installed in the Geneva area (Switzerland). It could achieve an energy of 100 TeV by colliding proton beams (FCC-hh) travelling through a 100 km tunnel. Unprecedented radiation ...
The complete radiation field pattern of a vertical Hertzian dipole antenna on or above a lossless or low-loss dielectric half-space is studied using a rigorous Sommerfeld formalism. The reflected fields in the air above the interface and the subsurface fie ...
Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...
A double-null configuration is being considered for the EU-DEMO, due to its potential benefits for power exhaust arising from the use of two active divertors and magnetically disconnected low- and high-field sides. Using systematic parameter scans in fluid ...
Modern silicon-based detectors for high-energy physics operate in an experimental environment with sub-zero temperatures. At those temperatures, even low traces of humidity will produce vapor condensation with damages to the detectors. Monitoring relative ...
The AD-target (Antiproton Decelerator Target) is the main antiparticle production element of the CERNâs (European Organization for Nuclear Research) AD (Antiproton Decelerator) complex. Antiprotons are produced by colliding a pulsed 1.5 * 10^13 ppp (prot ...
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were ...