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Free electron lasers (FEL's) are not new instruments: for a long time, they have produced high-intensity photon beams, primarily in the infrared. They can be, therefore, excellent complementary facilities to synchrotron radiation, whose primary spectral do ...
1993 has been full of landmarks for interface research: the new ultrabright soft X-ray synchrotron sources ALS-Berkeley, ELETTRA-Trieste and SRRC-Taiwan, and the user operation of the free electron laser (FEL) at Vanderbilt. They are particularly important ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application to ...
