We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application to our knowledge of a free-electron laser to interface research.
Elyahou Kapon, Alexandru Mereuta, Andrei Caliman
Leonid Rivkin, Rasmus Ischebeck, Christoph Peter Hauri, Ishkhan Gorgisyan
Romain Christophe Rémy Fleury, Theodoros Koutserimpas