Concept

65 nm process

Related publications (32)

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

Diversifying Databases of Metal Organic Frameworks for High-Throughput Computational Screening

Berend Smit, Sauradeep Majumdar, Seyedmohamad Moosavi, Daniele Ongari, Kevin Maik Jablonka

By combining metal nodes and organic linkers, an infinite number of metal organic frameworks (MOFs) can be designed in silico. Therefore, when making new databases of such hypothetical MOFs, we need to ensure that they not only contribute toward the growth ...

AMER CHEMICAL SOC2021

Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes

Sylvain Dunand, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety ...

2021

Fabrication of zipping electrostatic actuators incorporating inkjet-printed layers

Herbert Shea, Samuel Rosset, Giulio Grasso

Zipping electrostatic actuators operate by bending flexible electrodes using electrostatic forces. This principle allows the use of a wide range of dielectric and conductive materials. Additive Manufacturing (AM) techniques can be used to fabricate these a ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Teodor Rosca, Matteo Cavalieri, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Mario Stipcevic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

Fabrication and applications of AuAg alloy metasurfaces and hybrid metal dielectric nanoantennas

Debdatta Ray

The most prevalent materials used in the field of plasmonics are Au and Ag. However, for the past few years, the plasmonic community has also been looking for alternative materials that have lower losses than Au and higher stability than Ag. This thesis is ...

EPFL2021

Microwave-to-Optical Transduction with Gallium Phosphide Electro-Optomechanical Devices

Simon Benjamin Klaus Hönl

Quantum computing is one of the great scientific challenges of the 21st century. Small-scalesystems today promise to surpass classical computers in the coming years and to enable thesolution of classically intractable computational tasks in the fields of q ...

EPFL2021

A Low-Power 9-Bit 222 MS/s Asynchronous SAR ADC in 65 nm CMOS

Yusuf Leblebici, Firat Çelik, Ayça Akkaya

This paper presents a 9-bit 222 MS/s low-power asynchronous single-bit/cycle successive approximation register (SAR) ADC. The SAR ADC combines techniques such as asynchronous clocking, binary-weighted custom-designed capacitive DAC with small unit capacito ...

IEEE2020

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