Relaxation oscillator

Summary

In electronics a relaxation oscillator is a nonlinear electronic oscillator circuit that produces a nonsinusoidal repetitive output signal, such as a triangle wave or square wave. The circuit consists of a feedback loop containing a switching device such as a transistor, comparator, relay, op amp, or a negative resistance device like a tunnel diode, that repetitively charges a capacitor or inductor through a resistance until it reaches a threshold level, then discharges it again. The period of the oscillator depends on the time constant of the capacitor or inductor circuit. The active device switches abruptly between charging and discharging modes, and thus produces a discontinuously changing repetitive waveform. This contrasts with the other type of electronic oscillator, the harmonic or linear oscillator, which uses an amplifier with feedback to excite resonant oscillations in a resonator, producing a sine

Official source

https://en.wikipedia.org/wiki/Relaxation_oscillator

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It has already been a few years since the first appearance of micro-electromechanical systems (MEMS) in academic research. Since then, a broad number of devices have been designed under this generic term. Bulk-acoustic wave (BAW) resonators are among the few of them which have become exploited at industrial level. They are mainly used to implement filters for mainstream telecommunication applications. In a different domain, potential applications for integrated wireless transceivers are flourishing. While some of them require always higher data rates, others need devices with low data rate but even lower power consumption. The goal of this thesis is to explore ways of using BAW resonators to implement building blocks for such a low-power radio and actually verify the postulate that this could help improving power consumption as well as miniaturize key functionalities. For the active integrated circuit part, the choice of a standard digital 0.18µm CMOS process established itself for its low cost and ubiquity. The specifications for the developed radio receiver are calculated for a physical layer derived from the well known Bluetooth communication protocol in the 2.4GHz ISM band with similar applications scenarii but with much lower data rates and wider channel spacing. After presenting the advantages and limitations of the devices, the implications for using BAWresonators to implement a low-power radio are investigated at circuit and system levels and a super-heterodyne architecture is proposed. A selective low-noise amplifier (LNA) is used at the circuit front-end to yield image and blocker rejection. Measurements for the RF front-end comprising an external balun, the selective LNA, a first downconversionmixer and an intermediate-frequency (IF) amplifier showed an overall noise figure of 11dB for a current consumption of 1.5mA under 1.2V. The high selectivity of the design yields an image rejection ratio of at least 50dB and allows to decrease linearity requirements and thus power consumption. A slightly improved version of the same front-end integrated together with the analog baseband signal processing chain but still using external local oscillators showed sensitivities of -96dBm at 100kbps symbol rate and -93dBm at 200kbps with an external state-of-the art FSK demodulator, allowing to extrapolate a global noise figure of 12.2dB for a global current consumption of 2.3mA under 1.2V. The proposed solution for the frequency synthesis uses both a BAW oscillator for the first downconversion to IF and a quadrature quasi-harmonic relaxation oscillator to translate the signals to baseband. The relaxation oscillator is embedded within a phase-locked loop (PLL) for which all the required blocks are discussed. Particularly, a novel modular multi-modulus frequency divider is presented, which does not necessitate complicated logic to yield the wanted division ratio and uses dynamic logic. The necessary digital circuitry to control the frequency generation is discussed as well. Finally, measurements for the complete receiver using the proposed frequency synthesis as well as digital control and demodulator implemented on FPGA are presented.

EPFL2008

Magnetization Reversal Dynamics in Ferromagnetic Semiconductors

Liza Herrera Diez

This thesis is dedicated to the study of the magnetization reversal dynamics in compressively strained (Ga,Mn)As and differently functionalized (Ga,Mn)As materials. In the first part the domain wall dynamics of pure (Ga,Mn)As/GaAs materials is in the focus. The changes in the magnetic anisotropy energy landscape occurring as a function of temperature are monitored in detail by different experimental techniques. These measurements provide the necessary information for the identification of the temperature ranges corresponding to different magnetic anisotropy regimes. Knowing the biaxial anisotropy and uniaxial anisotropy dominated regimes the dependence of the domain wall dynamics on the magnetic anisotropy landscape is studied. Critical changes in domain wall alignment observed by Kerr microscopy are found upon changing from biaxial to uniaxial anisotropy. These changes could be partially attributed to the tendency of the system to minimize magnetic free poles at the domain boundaries. To complement the space resolved studies of the magnetization reversal, magnetic time relaxation effects are addressed. In particular the magnetic aftereffect in (Ga,Mn)As/GaAs is studied in detail. The irreversible aftereffect is evidenced as a critical reduction of the domain wall velocity with time under a constant applied magnetic field below coercivity. This time relaxation is tracked as a function of both time and magnetic field. The measurements show that the overall relaxation is composed of two relaxation processes acting in parallel at short and long time scales. By fitting these experimental results the values of the relaxation times of both relaxation processes were obtained. By this modeling also the values of the activation volumes for two independent (Ga,Mn)As materials are estimated. In the second part of this thesis the possibilities of tuning the electrical and magnetic properties of (Ga,Mn)As by volume and surface treatments are explored. As for the volume modification, oxygen species were incorporated into the (Ga,Mn)As films by means of exposure to an oxygen plasma. The incorporation of oxygen was evidenced by depth profile X-ray photoelectron spectroscopy. This treatment is found to weaken the ferromagnetism, visible as a reduction in the Curie temperature, and to hinder the electrical transport evidenced as an increase in the electrical resistance. In agreement with theories accounting for the hole mediated ferromagnetism in (Ga,Mn)As this behaviour was related to a hole compensation mechanism arising from the presence of oxygen impurities sitting in interstitial positions of the (Ga,Mn)As Zinc blende structure. In the last part, the modulation of the electrical and magnetic properties via surface functionalization is presented. The effects produced by the adsorption of molecular species on (Ga,Mn)As are similar to those found after oxygenation, namely a strong weakening of the magnetic properties and an increase in the values of the electrical resistance. However, in this case the distinctive feature is provided by the possibility of regulating the hole quenching effect by exploiting the additional degree of freedom provided by the chemical properties of the adsorbates. The adsorbate chosen for these experiments are dye molecules that absorb light in the visible range, in this way allowing for a light modulated interaction with the substrate. Using this concept is was possible to observe a modulation of the ferromagnetic transition temperature, the coercive field and the electrical resistance upon illumination. These observations provide a proof of principle for the realization of photo-sensitized (Ga,Mn)As devices where the magnetic properties can be regulated by light.

EPFL2011

Low-power and low-voltage analog baseband and quadrature frequency synthesizer

Uroschanit Yodprasit

Following the trend in portable wireless communications, this dissertation explores new approaches to designing of power-critical building blocks in the elementary circuit level. Specifically, the work focuses on designs of baseband continuous-time Gm-C filter, LC-resonator quadrature oscillators, transistor-only quadrature oscillators and LC-resonator frequency dividers. The established circuits share a common design objective of low-power and low-voltage operation, where the simplicity of the demonstrated topologies serves as a basis. The dissertation is separated in two parts. The first part is dedicated for the baseband section where a 3rd-order Bessel filter is designed and fabricated. The filter comprises a set of linear transconductors, which each one is based on the operation of triode-biased transistors. According to the operation in this region and to the simplicity of the transconductor, high dynamic range can be achieved for a supply voltage as low as 1.2 V. In the other part, attempts in reducing the power consumption of two critical building blocks in a frequency synthesizer, namely, the quadrature oscillator and the first-stage frequency divider, are introduced. For the oscillators, two quadrature oscillators based on LC resonators are presented, in conjunction with a transistor-only quadrature oscillator. Quadrature signal generations in these designs are achieved by making use of the principles of ring oscillator and coupled oscillator. The last building block that is designed in this part is the LC-based injection-locked frequency divider. The single-ended Colpitts oscillator topology is used as the core circuit of the divider due to its simplicity and low-voltage property. Detailed analysis concerning the phase relationship between the input and the output leads to the implementations of differential and quadrature divider configurations. Although a silicon integration is done only for the baseband filter, the concept, the operation and the theories developed for the quadrature oscillators and the frequency dividers have been verified against simulations and measurements employing low-frequency discrete prototypes. As they are illustrated in each chapter, the established theories match closely to the measurements.

EPFL2006