Concept

Dark current (physics)

Related publications (31)

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Device for measuring a force exerted on an object

Simon Nessim Henein, Charles Baur, Mohammad Hussein Kahrobaiyan, Mohamed Gamal Abdelrahman Ahmed Zanaty

The present invention relates to a device for measuring a contact force exerted by an object on a probe comprising a lever and said probe for contacting the object. The lever is pivotably coupled to a body by coupling means. The device comprising a fixed f ...

2020

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

2017

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

2017

Development of TORCH readout electronics for customised MCPs

Christoph Frei

The TORCH detector is being developed for low-momentum particle identification, combining time-of-flight and Cherenkov techniques to achieve charged particle pi/K/p separation up to 10 GeV/c over a flight distance of 10m. This requires a timing resolution ...

Iop Publishing Ltd2016

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process

Christian Enz, Assim Boukhayma, Arnaud Peizerat

A sub-0.5e−rms temporal read noise VGA (640H×480V) CMOS image sensor has been integrated in a standard 0.18μm 4PM CMOS process. The low noise performance is achieved exclusively through circuit optimization without any process refinements. The presented im ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Scintillation detectors based on silicon microfluidic channels

Philippe Renaud, Alessandro Mapelli, Pietro Maoddi

Microfluidic channels obtained by SU-8 photolithography and filled with liquid scintillators were recently demonstrated to be an interesting technology for the implementation of novel particle detectors. The main advantages of this approach are the intrins ...

Institute of Physics2014

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