Publications related to Indium gallium arsenide

High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown ...

Institute of Electrical and Electronics Engineers2011

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Bernt Ketterer

Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...

Institute of Physics2011

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Romain Carron, Pascal Gallo

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorpor ...

American Institute of Physics2011

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Elyahou Kapon, Alok Rudra, Klaus Leifer

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

2011

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Elyahou Kapon, Alok Rudra, Daniel Oberli, Nicolas Moret

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within sma ...

2011

Window layer with p doped silicon oxide for high V-oc thin-film silicon n-i-p solar cells

Christophe Ballif, Franz-Josef Haug, Jordi Escarre Palou, Céline Pahud, Rémi Biron

We investigate the influence of the oxygen content in boron-doped nanocrystalline silicon oxide films (p-nc-SiOx) and introduce this material as window layer in n-i-p solar cells. The dependence of both, optical and electrical properties on the oxygen cont ...

American Institute of Physics2011

Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Romain Carron, Pascal Gallo

GaInAsN quantum dots (QDs) were grown in inverted pyramids on a patterned (111) B GaAs surface. Incorporation of N in the active structure is attested to by a significant (similar to 80 meV) redshift of the photoluminescence spectrum of the QDs. Influence ...

American Institute of Physics2011

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Indium gallium arsenide

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Window layer with p doped silicon oxide for high V-oc thin-film silicon n-i-p solar cells

Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots

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Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation

Window layer with p doped silicon oxide for high V-oc thin-film silicon n-i-p solar cells

Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots

Gold-Free GaAs Nanowire Synthesis and Optical Properties