Concept

Thermionic emission

Related publications (70)

Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows th ...

2010

Micro-electro-mechanical (MEM) diode switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

Elsevier2009

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Paul Muralt

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 CCTO thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor de ...

2009

Theoretical study of the performance for short channel carbon nanotube transistors with asymmetric contacts

Nicola Marzari, Ho Ling Li

We have simulated short channel carbon nanotube field-effect transistors with asymmetric source and drain contacts using a Coupled mode space approach within the non-equilibrium Green's function framework. The simulated results show that the asymmetric con ...

2008

Near-field light emission from dark states excitonic occupations

We theoretically analyze the carrier capture and distribution among the available energy levels of a symmetric semiconductor quantum dot under continuous-wave excitation resonant with the barrier energy levels. At low temperature, all the dot level occupat ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

2008

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007

Characterization of electron bunches from field emitter array cathodes for use in next-generation X-Ray free electron lasers

PSI is interested in developing an X-FEL as a companion radiation source to the existing Swiss Light Source. In order to achieve radiation wavelengths as low as 1 Å, the X-FEL requires excellent electron beam quality and high beam energy. The energy requir ...

EPFL2007

Prospects of resonant optical antennas for nano-analysis

Olivier Martin

Suitably shaped metal nanostructures act as resonant optical antennas that efficiently collect light and confine it to a subwavelength volume. Vice versa, light emission from nano volumes can be enhanced by coupling to antenna structures. We give a short i ...

2006

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