Concept

Mercury cadmium telluride

Related publications (65)

A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths

The Ge APD detectors are fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). Th ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

ZnO:Al/(p)a-Si:H Contact Formation and Its Influence on Charge Carrier Lifetime Measurements

El Mahdi El Mhamdi

In this paper we present an analysis of the contact formation between an n-type TCO and a p-type a- Si:H as used for emitter structures in high efficiency a-Si:H/c-Si heterojunction solar cells. By means of transient photoconductance decay measurements it ...

2012

Localized and delocalized Ti 3d carriers in LaAlO3/SrTiO3 superlattices revealed by resonant inelastic x-ray scattering

Thorsten Schmitt, Joël Mesot

The important source of interface conductivity in LaAlO3/SrTiO3 heterostructures, the Ti 3d carriers, is probed with resonant inelastic x-ray scattering at the Ti 2p(3/2) edge of epitaxially grown superlattices. We reveal unambiguously the generation of bo ...

2011

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation

Laurent Balet

The authors experimentally investigate the effects of atomic layer deposition (ALD) and laser-assisted oxidation on the optical modes in GaAs L3 photonic crystal air-bridge cavities, using layers of InAs quantum dots as internal light source. Four distinct ...

2011

InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...

American Chemical Society2010

Investigations of room temperature bolometers for THz applications

Danick Briand

Abstruct- We investigate in this work the perlbrmance of two conligurations of room temperature bolometers dedicated to THz applications. Fabrication processes, noise level, sensitivity and resolution characterizations ùre presented. Results emphasize the ...

2010

Optical Properties of InAs Quantum Dot Array Ensembles with Predetermined Lateral Sizes from 20 to 40 nm

Anna Fontcuberta i Morral, Emanuele Uccelli, Laura Waller

Cleaved edge overgrowth and selective area epitaxy were combined for the synthesis of InAs quantum dot (QD) arrays with lateral sizes from 20 to 40 nm. The optical properties were locally assessed by confocal photoluminescence spectroscopy experiments at l ...

2010

Polarization sensitive silicon photodiodes using nanostructured metallic grids

Olivier Martin, Christian Santschi, Liza Carol Andrea Dunbar

In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semicon ...

2009

Cavity-enhanced photonic crystal light-emitting diode at 1300 nm

Laurent Balet, Blandine Alloing

We report direct evidence of enhanced spontaneous emission in a photonic crystal light-emitting diode (LED) at telecom wavelength (lambda similar to 1300 nm). This result is crucial to obtain an electrically driven single photon source with high extraction ...

2009

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Procedia Chemistry2009

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