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Mercury cadmium telluride

Related publications (65)

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Elsevier2009

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Elsevier B.V.2009

Tunable resonant cavity enhanced detectors using vertically actuated MEMS mirrors

Niels Quack

Highly sensitive photodetectors for the mid-infrared have recently been obtained by placing a photodiode inside a Fabry-Pérot cavity (Arnold et al 2005 Appl. Phys. Lett. 87 141103). These resonant cavity enhanced detectors (RCED) are sensitive at the res ...

2008

Tunable Resonant Cavity Enhanced Detectors using Vertical MEMS Mirrors

Niels Quack

Highly sensitive photodetectors for the mid infrared have been obtained by placing a photodiode inside a Fabry Perot cavity. These resonant cavity enhanced detectors (RCED) are sensitive at the resonances only, which depend on the distance between the two ...

IEEE2007

Thermal-mechanical detector array with integrated diffraction grating

Onur Ferhanoglu

An uncooled thermal detector array with low NETD is designed and fabricated using MEMS bimaterial structures. A diffraction grating is embedded on the pixel membrane for sensing sub-nm mechanical deflections. The first order reflected light was focused on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

A structural investigation of the four phases of 7-oxabicyclo[2.2.1]heptane

Philip Pattison

Powder synchrotron X-ray diffraction studies confirm that 7-oxabicyclo[2.2.1]heptane, (oxanorbornane), forms three solid phases on cooling and four on warming, as previously indicated by spectroscopic and DSC meas urements. The two highest temperature phas ...

2007

Innovative optoelectronic approaches to biomolecular analysis with arrays of silicon devices

Giovanni De Cesare, Carlotta Guiducci

Novel approaches for the development of integrated molecular analysis tools have been tested. A label-free method for molecular detection and characterization based on UV absorbance have been applied and two technologies of silicon photodetectors arrays ha ...

2006

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...

2006

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

Nicolas Grandjean, Marc Ilegems, Raphaël Butté, Denis Martin

The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8 mu m) on c-plane sapphire substrates with dislocation densities lower than 2x10(8) cm(-2) is demonstrated using a two-step process similar to that of metal organic vapor ...

2006

High-speed Si resonant cavity enhanced photodetectors and arrays

Yusuf Leblebici, Paul Victor Georges Muller

Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry–Perot resonantmicrocavity [P. E. Green, IEEE Spectrum 13 (2002)]. The increased optical field allows ...

2004

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