Concept

Degenerate energy levels

Related publications (161)

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Semiconductor quantum dots are usually compared to artificial atoms, because their electronic structure consists of discrete energy levels as for natural atoms. These artificial systems are integrated in solid materials and can be localized with a spatial ...

EPFL2010

Energy-Aware Traffic Engineering

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Energy consumption of the Internet is already substantial and it is likely to increase as operators deploy faster equipment to handle popular bandwidth-intensive services, such as streaming and video-on-demand. Existing work on energy saving considers loca ...

2010

Koopmans' condition for density-functional theory

Nicola Marzari, Matteo Cococcioni, Andrea Ferretti

In approximate Kohn-Sham density-functional theory, self-interaction manifests itself as the dependence of the energy of an orbital on its fractional occupation. This unphysical behavior translates into qualitative and quantitative errors that pervade many ...

2010

Capacitated disassembly scheduling with random demand

Paul Xirouchakis, Hwa-Joong Kim

This paper considers disassembly scheduling, which is the problem of determining the quantity and timing of the end-of-use/life products to be disassembled while satisfying the demand for their parts obtained from disassembling the products over a planning ...

Taylor & Francis2010

Effective Spin Model for the Spin-Liquid Phase of the Hubbard Model on the Triangular Lattice

Frédéric Mila

We show that the spin-liquid phase of the half-filled Hubbard model on the triangular lattice can be described by a pure spin model. This is based on a high-order strong coupling expansion ( up to order 12) using perturbative continuous unitary transformat ...

2010

De Haas-van Alphen effect and energy gaps of a correlated two-dimensional electron system in an AlAs two-valley pseudospin system

Anna Fontcuberta i Morral, Dirk Grundler

We report highly sensitive de Haas-van Alphen (dHvA) effect measurements on a high-mobility two-dimensional electron system in an AlAs quantum well. Here two valleys are occupied forming a pseudospin system. At 400 mK, the dHvA effect shows pronounced osci ...

2009

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas

When described through a plane-wave basis set, the inclusion of exact nonlocal exchange in hybrid functionals gives rise to a singularity, which slows down the convergence with the density of sampled k points in reciprocal space. In this work, we investiga ...

2009

Multifrequency ESR in ET2 MnCu[N(CN)(2)](4): A radical cation salt with quasi-two-dimensional magnetic layers in a three-dimensional polymeric structure

László Forró, Bálint Náfrádi, Krisztina Nagy

The radical cation salt, ET2MnCuN(CN)(2), [ET=bis(ethylenedithio)tetrathiafulvalene] with an unusual three-dimensional anionic polymeric network is studied by x-ray diffraction, static susceptibility measurements, and electron spin resonance (ESR) at ...

2009

Detection Of Vibrationally Excited Co In Irc+10216

Sandra Bruenken

Using the Submillimeter Array we have detected the J = 3-2 and 2-1 rotational transitions from within the first vibrationally excited state of CO toward the extreme carbon star IRC+10216 (CW Leo). The emission remains spatially unresolved with an angular r ...

2009

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas

We introduce a scheme for the calculation of band offsets and defect energy levels at semiconductor-oxide interfaces. Our scheme is based on the use of realistic atomistic models of the interface structure and of hybrid functionals for the evaluation of th ...

American Institute of Physics2009

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