Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...
We investigate the small-particle phonon-polariton response of several microstructures that are made of silicon carbide (SiC). Phonon polaritons can be excited in a wavelength region between 10 and 12 μm. Simple structures such as elliptical cylinders supp ...
We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This b ...
Relaxor Pb(Sc-12/Ta-1/2)O-3 (PST) thin films have been prepared using mixed alkoxide and acetate precursors on TiO2/Pt/TiO2/SiO2/Si substrates. Relaxor behavior as evidenced by frequency dispersion of the permittivity as a function of temperature was obser ...
Using density-functional theory, we investigate the structural, vibrational, and dielectric properties of Hf and Zr oxides and silicates which have drawn considerable attention as alternative high-kappa materials. For the silicates, we consider hafnon HfSi ...
We investigate the dielectric screening across the Si-SiO2 interface using a first-principle approach. By determining the profile of the microscopic polarization and the effective polarizabilities of SiOn (n = 0,..4) structural units, we show that the vari ...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T-c) is traditionally accomplished by chemical substitution - as in BaxSr1-xTiO3, the ma ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Properties and fabrication status of microdevices for microwaves based on polar ceramics are reviewed. We discuss bulk acoustic wave devices with AlN films, rf-MEMS capacitive switches with high permittivity materials, and tunable ferroelectrics. The relev ...
The piezoresistive effect of thick-film resistors has found widespread application in pressure and force sensors due to their high strain-sensitivity, stability and low-cost. The main material requirements for these applications are a high piezoresistive r ...