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In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often describe ...
Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
A substrate with transparent electrodes is formed from a transparent material on which is deposited a film of a transparent conducting material with a thickness e 1and a refractive index n 1. A substrate with transparent electrodes is formed from a transpa ...
Quasi-amorphous BaTiO3 thin films (see Figure) represent a polar ionic solid without spatial periodicity. Most probably, polarity of the quasi-amorphous BaTiO3 is associated with directional ordering of crystal motifs formed in the steep temperature gradie ...
We address the dielectric constant (or the polarizability for an isolated system) as obtained in density-functional supercell calculations with a discrete k-point sampling. We compare a scheme based on conventional perturbational theory to one based on a d ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 Angstrom down to the atomic sc ...
Thick film resistors are prepared as pastes, which are screen-printed and fired on dielectric substrates such as alumina and widely used in hybrid circuits. The final resistor properties are mostly influenced by the firing conditions and the interactions b ...
For the first time this paper presents strip lines fabricated using SU-8 as the dielectric material. It shows the complete fabrication process of micromachined strip lines with a total height of 35.5 um as well as their characterization by on-wafer S-param ...
In this paper, the resistive and piezoresistive properties of a commercial resistive composition (Du Pont 2041), often used for strain-gauge applications, are examined on several dielectric compositions, which themselves are deposited onto various ceramic ...
