Concept

Strained silicon

Related publications (75)

Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length

Since the advent of CMOS technology, the semiconductor industry has been successful in achieving continuously improved performance. The feature size of the most important electronic device, the Metal Oxide Semiconductor Field Effect Transistor (MOSFET), ha ...

EPFL2011

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gat ...

2010

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Jean-Michel Sallese, Christophe Lallement

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold vol ...

2010

Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Alexandra Sarabando de Carvalho

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped silicon and Si-doped germanium Clusters to mimic Si-rich and Ge-rich SiGe alloys, respectively Jahn-Teller effects and electrical levels were investigated in b ...

2010

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

2010

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

Mihai Adrian Ionescu, Katherine Boucart, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics. We demonstrate that a lateral strain profile with a maximum of strain higher than 3GPa at the BTB source ...

2009

Influence of Feature Size, Film Thickness, and Silicon Doping on the Performance of Nanostructured Hematite Photoanodes for Solar Water Splitting

Michael Graetzel, Kevin Sivula, Ilkay Cesar

Photoanodes consisting of nanostructured hematite prepared by atmospheric pressure chemical vapor deposition (APCVD) have previously set a benchmark for solar water splitting. Here, we fully investigate this promising system by varying critical synthetic p ...

2009

New approach for SOI pixel sensor

Louis Harik

Silicon on Insulator (SOI) is an interesting alternative to bulk silicon for the fabrication of integrated circuits due to its advantages with respect to the junction leakage, low switching noise coupling, high temperature immunity, low voltage and low pow ...

EPFL2009

Semiconductor device and method of manufacturing a semiconductor device

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a Metal-Ferroelectric-Oxide-Semiconductor Capacitor aiming at the extraction of the polarization characteristic. In order to evaluate the electrical performances of the fer ...

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