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Several geometries have recently been proposed for spin-transfer oscillators, with the purpose of optimizing the output power and the frequency dependence on the applied current, as well as minimizing the external magnetic field required to stabilize magne ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011
It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...
We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to graphene field ...
We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a ...
In the framework of the ITER qualification tests the second Chinese sample (CNTF2) was tested in the SULTAN facility. The sample was made of two identical ITER TF type cable-in-conduit conductor sections. Internal Sn strands offered by Western Superconduct ...
Herein we report a theoretical study of diode-like behavior of negatively charged (e.g., glass or silica) nanopores at different potential scan rates (1-1000 V center dot s(-1)). Finite element simulations were used to determine current-voltage characteris ...
The rich dynamical nature of neurons poses major conceptual and technical challenges for unraveling their nonlinear membrane properties. Traditionally, various current waveforms have been injected at the soma to probe neuron dynamics, but the rationale for ...
We compare non-local magnetoresistance measurements in multi-terminal Ni nanostructures with corresponding local experiments. In both configurations, the measured voltages show the characteristic features of anisotropic magnetoresistance (AMR). However, th ...
PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...
Magnetic tunnel junctions sandwiching a superlattice thin film of Fe oxide nanocrystals (NCs) were investigated. The transport was found to be controlled by Coulomb blockade and single-electron tunneling, already at room temp. A good correlation was identi ...