Concept

Dielectric gas

Related publications (66)

Ionic polarizability of conductive metal oxides and critical thickness for ferroelectricity in BaTiO3

Nava Setter, Alexander Tagantsev, Guido Gerra

We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculati ...

2006

Modelling of dielectric constants of amorphous Zr silicates

Alfredo Pasquarello

We discuss various decomposition schemes for analysing the dielectric constants of Zr silicates in terms of local properties. Such schemes serve the purpose of predicting the dielectric constants of amorphous alloys, when their system size precludes the po ...

2005

Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates

Nava Setter, Dragan Damjanovic

The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...

2005

Atomic-scale modelling of the Si(100)-SiO2 interface

Alfredo Pasquarello, Angelo Bongiorno

We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...

2005

The preparation and dielectric properties of potassium niobate tantalate (KTN) have been investigated with the aim of exploring the material's potential for ferroelectric tunable applications. The samples were prepared both by conventional sintering in air ...

2005

Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties

Alfredo Pasquarello, Angelo Bongiorno

We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...

2005

Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique

Nava Setter, Paul Muralt, Alexander Tagantsev, Konstantin Astafiev

Structural and dielectric properties of epitaxial SrTiO3 (STO) thin films on LaAlO3 substrates fabricated by a two-step growth technique using pulsed laser deposition were investigated by in situ and ex situ observations in terms of strain relaxation from ...

2005

Effects of electrical leakage currents on MEMS reliability and performance

Herbert Shea, Shan Jin

Electrostatically driven MEMS devices commonly operate with electric fields as high at 108 V/m applied across the dielectric between electrodes. Even with the best mechanical design, the electrical design of these devices has a large impact both on perform ...

Institute of Electrical and Electronics Engineers2004

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In this work, a novel low-temperature thick-film system (dielectrics, resistors and conductors) is characterised for application on substrates, which cannot be exposed to the standard high-temperature 850 C thick-film firing cycle. Aluminium alloy sheets a ...

2004

Using density-functional theory, we investigate the structural, vibrational, and dielectric properties of Hf and Zr oxides and silicates which have drawn considerable attention as alternative high-kappa materials. For the silicates, we consider hafnon HfSi ...

2004

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