Magnus effect

The Magnus effect is an observable phenomenon commonly associated with a spinning object moving through a fluid. A lift force acts on the spinning object. The path of the object may be deflected in a manner not present when the object is not spinning. The deflection can be explained by the difference in pressure of the fluid on opposite sides of the spinning object. The strength of the Magnus effect is dependent on the speed of rotation of the object. The most readily observable case of the Magnus effect is when a spinning sphere (or cylinder) curves away from the arc it would follow if it were not spinning. It is often used by football and volleyball players, baseball pitchers, and cricket bowlers. Consequently, the phenomenon is important in the study of the physics of many ball sports. It is also an important factor in the study of the effects of spinning on guided missiles—and has some engineering uses, for instance in the design of rotor ships and Flettner airplanes. Topspin

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An evaluation of surface micro- and mesoplastic pollution in pelagic ecosystems of the Western Mediterranean Sea

Luiz Felippe De Alencastro, Florian Faure, Pascal Hagmann

This study examines the distribution, abundance and characteristics of surface micro- and mesoplastic debris in the Western Mediterranean Sea. 41 samples were collected in 2011 (summer) and 2012 (summer). Results, firstly, revealed that micro- (

Springer Heidelberg2015

Integration of Intra Chip Stack Fluidic Cooling using Thin-Layer Solder Bonding

Yusuf Leblebici, Yassir Madhour, Bruno Michel, John Richard Thome, Michail Zervas

Three-dimensional (3D) stacking of integrated circuit (IC) dies by vertical integration increases system density and package functionality. The vertical integration of IC dies by area-array Through-Silicon-Vias (TSVs) reduces the length of global interconnects and accordingly the signal delay time. On the other hand, the ongoing miniaturization trend of ICs results in constantly increasing chip-level power densities. Thus, the development of new chip cooling concepts is of utmost importance. Therefore, scalable cooling solutions for chip stacks, such as interlayer cooling, need to be investigated. This paper presents a new concept for the integration of intra chip stack fluidic cooling, namely die-embedded microchannels for single- and twophase thermal management, using a patterned thin-layer eutectic solder bonding technique for the stack assembly. Results showed the successful fabrication of 5-layer chip stacks with embedded microchannels and high aspect ratio TSVs. Optical inspections demonstrated the proper bond line formation and direct current (DC) daisy-chain electrical tests indicated the successful combination of TSVs with thin-layer solder interconnects. Mechanical shear tests on die-on-die bonded samples showed the strength of the patterned thin-layer solder bond (16MPa). An added solder ring-pad component to seal the electrically active pad from any conductive liquid coolant was also investigated and reflow tests on such geometries showed the appearance of a balling effect along the solder ring line. This balling was found to be mitigated when the ring aspect ratio (deposited solder height to ring width ratio) was kept below the experimentally observed critical value of 0.65.

IEEE2013

Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface

Roberto Car, Alfredo Pasquarello

A first-principles investigation of Si 2p core-level shifts at the Si(001)-SiO2 interface is presented. We introduce several relaxed interface models obtained by attaching different crystalline forms of SiO2 to Si(001). These model structures contain the minimal transition region required to accommodate the three intermediate oxidation states of silicon, in accord with photoemission experiments. The bond density mismatch is fixed by saturating all the bonds, as required by electrical measurements, Calculated core shifts are primarily affected by the number of nearest-neighbor oxygen atoms, showing a linear dependence. This result confirms the traditional interpretation of the photoemission spectra based on a charge-transfer model. Core relaxation plays a significant role accounting for more than 50% of the total shifts. The shifts are found to be essentially insensitive to second and further neighbors in the structure. Structural deformations, such as those implied by the distribution of Si-O bond lengths in a-SiO2, yield distributions of core-level shifts that an too small to account for the observed width of the photoemission peaks. In the oxide, we observe a spatial dependence of the Si+4 shifts with distance from the interface plane. We relate this behavior to the dielectric discontinuity at the interface and suggest that this effect explains the shift of the Si+4 with oxide thickness, observed in photoemission experiments.

1996