Publications related to Birth defect

From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Hassan Ghasemzadeh Mohammadi

Controllable-Polarity Silicon Nanowire Transistors (CP-SiNWFETs) are among the promising candidates to complement or even replace the current CMOS technology in the near future. Polarity control is a desirable property that allows the on-line configuration ...

Institute of Electrical and Electronics Engineers2015

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Oleg Yazyev, Jie Chen, Gabriel Albert Autes, Fernando Gargiulo

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous e ...

Amer Physical Soc2014

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect ...

Institute of Physics2014

Rv2466c Mediates the Activation of TP053 To Kill Replicating and Non-replicating Mycobacterium tuberculosis

Stewart Cole, Ruben Hartkoorn, Anthony Vocat

The emergence of multidrug- and extensively drug-resistant strains of Mycobacterium tuberculosis highlights the need to discover new antitubercular agents. Here we describe the synthesis and characterization of a new series of thienopyrimidine (TP) compoun ...

American Chemical Society2014

Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi1/2Na1/2)TiO3-xBaTiO3 piezoelectric ceramics

Dragan Damjanovic

Aging of piezoelectric properties was investigated in lead-free (1 - x)(Bi1/2Na1/2)TiO3-xBaTiO(3) doped with 1at.% Fe. The relaxor character of the un-poled material prevents macroscopic aging effects, while in the field-induced ferroelectric phase aging p ...

American Institute of Physics2014

The Channel-Activating Protease CAP1/Prss8 Is Required for Placental Labyrinth Maturation

Simona Frateschi, Friedrich Beermann, Roch-Philippe Charles, Aline Dousse

The serine protease CAP1/Prss8 is crucial for skin barrier function, lung alveolar fluid clearance and has been unveiled as diagnostic marker for specific cancer types. Here, we show that a constitutive knockout of CAP1/Prss8 leads to embryonic lethality. ...

Public Library of Science2013

Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study

Nava Setter, Nicola Marzari, Dragan Damjanovic, Anand Chandrasekaran

The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic or are induced by the addition of dopants. We study here PbTiO3 (th ...

Amer Physical Soc2013

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Charge transition levels of the As-As dimer defect at the InGaAs/Al2O3 interface are determined through density-functional calculations. At variance with the GaAs/Al2O3 interface where this defect gives rise to states within the band gap, its defect levels ...

Elsevier2013

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Birth defect

From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Rv2466c Mediates the Activation of TP053 To Kill Replicating and Non-replicating Mycobacterium tuberculosis

Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi1/2Na1/2)TiO3-xBaTiO3 piezoelectric ceramics

The Channel-Activating Protease CAP1/Prss8 Is Required for Placental Labyrinth Maturation

Integrating Defect Data, Code Review Data, and Version Control Data for Defect Analysis and Prediction

Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Modelling oriented investigations of primary radiation damage in ultra high purity Fe and FeCr alloys

Graph Chatbot

Chat with Graph Search

From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Rv2466c Mediates the Activation of TP053 To Kill Replicating and Non-replicating Mycobacterium tuberculosis

Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study

Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi1/2Na1/2)TiO3-xBaTiO3 piezoelectric ceramics

Integrating Defect Data, Code Review Data, and Version Control Data for Defect Analysis and Prediction

Modelling oriented investigations of primary radiation damage in ultra high purity Fe and FeCr alloys

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

The Channel-Activating Protease CAP1/Prss8 Is Required for Placental Labyrinth Maturation

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study