X-ray tubeAn X-ray tube is a vacuum tube that converts electrical input power into X-rays. The availability of this controllable source of X-rays created the field of radiography, the imaging of partly opaque objects with penetrating radiation. In contrast to other sources of ionizing radiation, X-rays are only produced as long as the X-ray tube is energized. X-ray tubes are also used in CT scanners, airport luggage scanners, X-ray crystallography, material and structure analysis, and for industrial inspection.
Electron microscopeAn electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.
BariumBarium is a chemical element with the symbol Ba and atomic number 56. It is the fifth element in group 2 and is a soft, silvery alkaline earth metal. Because of its high chemical reactivity, barium is never found in nature as a free element. The most common minerals of barium are baryte (barium sulfate, BaSO4) and witherite (barium carbonate, BaCO3). The name barium originates from the alchemical derivative "baryta", from Greek βαρὺς (barys), meaning 'heavy'. Baric is the adjectival form of barium.
Field electron emissionField electron emission, also known as field emission (FE) and electron field emission, is emission of electrons induced by an electrostatic field. The most common context is field emission from a solid surface into a vacuum. However, field emission can take place from solid or liquid surfaces, into a vacuum, a fluid (e.g. air), or any non-conducting or weakly conducting dielectric. The field-induced promotion of electrons from the valence to conduction band of semiconductors (the Zener effect) can also be regarded as a form of field emission.
Traveling-wave tubeA traveling-wave tube (TWT, pronounced "twit") or traveling-wave tube amplifier (TWTA, pronounced "tweeta") is a specialized vacuum tube that is used in electronics to amplify radio frequency (RF) signals in the microwave range. It was invented by Andrei Haeff around 1933 as a graduate student at Caltech, and its present form was invented by Rudolf Kompfner in 1942-43. The TWT belongs to a category of "linear beam" tubes, such as the klystron, in which the radio wave is amplified by absorbing power from a beam of electrons as it passes down the tube.
BiasingIn electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an active device in an amplifier. Many electronic devices, such as diodes, transistors and vacuum tubes, whose function is processing time-varying (AC) signals, also require a steady (DC) current or voltage at their terminals to operate correctly. This current or voltage is called bias. The AC signal applied to them is superposed on this DC bias current or voltage.
Point-contact transistorThe point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power.
Crookes tubeA Crookes tube (also Crookes–Hittorf tube) is an early experimental electrical discharge tube, with partial vacuum, invented by English physicist William Crookes and others around 1869-1875, in which cathode rays, streams of electrons, were discovered. Developed from the earlier Geissler tube, the Crookes tube consists of a partially evacuated glass bulb of various shapes, with two metal electrodes, the cathode and the anode, one at either end.
Silicon controlled rectifierA silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M.
Valve amplifierA valve amplifier or tube amplifier is a type of electronic amplifier that uses vacuum tubes to increase the amplitude or power of a signal. Low to medium power valve amplifiers for frequencies below the microwaves were largely replaced by solid state amplifiers in the 1960s and 1970s. Valve amplifiers can be used for applications such as guitar amplifiers, satellite transponders such as DirecTV and GPS, high quality stereo amplifiers, military applications (such as radar) and very high power radio and UHF television transmitters.