Concept
Point-contact transistor
Related publications (85)
Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits
Giovanni De Micheli, Alessandro Tempia Calvino, Heinz Riener, Shubham Rai, Akash Kumar
Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...
2022Electronic transport in graphene nanoribbon junctions
Graphene nanoribbons (GNRs) - one-dimensional strips of graphene - share many of the exciting properties of graphene, such as ballistic transport over micron dimensions, strength and flexibility, but more importantly, they exhibit a tunable band gap that d ...
EPFL2022Monocrystalline 1.7-eV MgCdTe solar cells
Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1-xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt inter ...
AIP Publishing2022Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies
The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...
EPFL2021An Analog-Assisted Digital LDO With Single Subthreshold Output pMOS Achieving 1.44-fs FOM
This letter describes an analog-assisted digital LDO that cascades a conventional digital LDO structure with a single, large output pMOS biased in subthreshold to enable fast response to output voltage droop. By digitally controlling the gate voltage of th ...
IEEE2021A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
Edoardo Charbon, Andrea Ruffino, Yatao Peng
A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...
2021Preserving Self-Duality During Logic Synthesis for Emerging Reconfigurable Nanotechnologies
Giovanni De Micheli, Heinz Riener, Shubham Rai, Akash Kumar
Emerging reconfigurable nanotechnologies allow the implementation of self-dual functions with a fewer number of transistors as compared to traditional CMOS technologies. To achieve better area results for Reconfigurable Field-Effect Transistors (RFET)-base ...
2021A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics
Edoardo Charbon, Andrea Ruffino, Yatao Peng
An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. As quantum computers grow in ...
NATURE PORTFOLIO2021Design and Manufacturing of an Electrostatic MEMS Relay for High Power Applications
Yves Perriard, Yoan René Cyrille Civet, Christian Köchli, Florian Louis Copt
This paper addresses the design and manufacturing of a crab-leg based MEMS relay for a high power application. Thanks to a contact resistance lower than 100 mΩ, the relay can hold a current in the order of magnitude of an Ampere without further thermal lim ...
2021Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Jessy Anthony Ançay
A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...
2020