Concept

Transistor model

Related publications (48)

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...

2007

Semiconductor memory device and method of operating same

Serguei Okhonin

There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodimen ...

2007

De l'effet de la polarisation électronique sur le transport de charge dans les semi-conducteurs moléculaires

Jean-David Picon

This work aims at a better understanding of transport mechanisms which take place in organic semiconductors such as pentacene. More accurately, we believe that the electronic polarization plays a leading part, which we try to identify in the particular cas ...

EPFL2006

A low-power, multichannel gated oscillator-based CDR for short-haul applications

Seyed Armin Tajalli, Yusuf Leblebici, Paul Victor Georges Muller

We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...

2005

Top-Down Design of a Low-Power Multi-Channel 2.5-Gbit/s/Channel Gated Oscillator Clock-Recovery Circuit

Seyed Armin Tajalli, Yusuf Leblebici, Paul Victor Georges Muller

IEEE2005

Electrical characterization and modelling of lateral DMOS transistor

With the work reported in this manuscript we have essentially contributed to the electrical characterization and modelling of high voltage MOSFETs, more particularly DMOS architectures such as X-DMOS and L-DMOS able to sustain voltages ranging from 30V to ...

EPFL2005

A model for mu;-power rectifier analysis and design

Catherine Dehollain, Michel Declercq, François Krummenacher, Jari-Pascal Curty

This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavio ...

2005

Design and analysis techniques for dynamic current mirrors

Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...

EPFL1990

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