Publications related to Ohmic contact

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, Luca Massimiliano Antognini, Sofia Libraro

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Amsterdam2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Xiao Zhou, Cheng Chen, Pengfei Ou

The contact nature when monolayer blue phosphorus (blueP) interfaces with three transition metal electrodes (i. e., Pd, Ir, and Pt) was unraveled by the ab initio density functional theory calculations. Specifically, n-type Schottky contact is observed for ...

ELSEVIER2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Active load cell with positive, negative and zero stiffness operating modes for micronewton range contact force monitoring in electrical probing

Simon Nessim Henein, Charles Baur, Hubert Pierre-Marie Benoît Schneegans, Michal Stanislaw Smreczak

This article describes a novel method for applying a contact force in the range of 1 to 100 μN with pointed probe on a microscale sample in order to perform ohmic electrical measurements. The solution is based on the new TIVOT active load cell combining th ...

2022

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Audrey Marie Isabelle Morisset, Xinya Niu

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

Philip Johannes Walter Moll, Matthias Carsten Putzke, Yi-Chiang Sun, Chunyu Guo, Jonas De Jesus Diaz Gomez, Maarten Ruud van Delft, Jacopo Oswald

As conductors in electronic applications shrink, microscopic conduction processes lead to strong deviations from Ohm's law. Depending on the length scales of momentum conserving (l(MC)) and relaxing (l(MR)) electron scattering, and the device size (d), cur ...

NATURE PORTFOLIO2021

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

2021

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Ohmic contact

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Active load cell with positive, negative and zero stiffness operating modes for micronewton range contact force monitoring in electrical probing

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

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Chat with Graph Search

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Active load cell with positive, negative and zero stiffness operating modes for micronewton range contact force monitoring in electrical probing