Person
Taifang Wang
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Related publications (7)
Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.
LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
EPFL2022Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
Elison de Nazareth Matioli, Luca Nela, Taifang Wang
Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...
2022LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
Elison de Nazareth Matioli, Luca Nela, Taifang Wang
In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...
IEEE2021