Concept

Resistor–transistor logic

Related publications (84)

Pre-Synthesis Optimization of Arithmetic Circuits

The efficient synthesis of circuits is a well-studied problem. Due to the NP-hardness of the problem, no optimal algorithm has been presented so far. However, the heuristics presented by several researchers in the past, which are also adopted by commercial ...

EPFL2010

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Libero Zuppiroli, Stéphane Suarez, Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the oxide dielectric; this interface is crucial for transistor performance. Self-assembled monolayers (SAMs) on the interfa ...

American Chemical Society2010

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...

EPFL2010

A VHDL-AMS Modeling Methodology for Top-Down/Bottom-Up Design of RF Systems

Alain Vachoux, Matteo Contaldo

This chapter presents a modeling methodology for the top-down/bottom-up design of RF systems based on systematic use of VHDL-AMS models. The model interfaces are parameterizable and pin-accurate. The designer can choose to parameterize the models using per ...

Springer2010

TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters

Stefano Michelis, Federico Faccio

TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radi ...

2010

Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produ ...

2010

Silicon microcantilevers with MOSFET detection

Luis Guillermo Villanueva Torrijo

We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...

2009

Novel CMOS Analog Pulse Shaping Filter for Solid-State X-Ray Sensors in Medical Imaging Systems

Rafal Tomasz Dlugosz

A new idea as well as CMOS implementation of a pulse-shaping filter useful in nuclear medicine to realize a multi-element detection by means of a multi-channel readout front-end ASIC have been presented. The filter changes the shape of pulses delivered by ...

Springer-Verlag2009

Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Eric Vittoz

This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

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