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In this work, we present a correlation between the morphological characterization of InyAl1−yAs/InxGa1−xAsheterostructures grown on InP substrates for high electron mobility transistors(HEMTs) applications as determined by transmission electron microscopy, ...
A detailed study is presented on AlInAs/InGaAs/InP composite channels. These devices combine the advantages of high mobility at low voltages and high electric field operations thanks to the use of a composite channel formed by a thin InGaAs layer and a dop ...
The loss of epithelial differentiation in carcinomas, which is accompanied by increased mobility and invasiveness of the tumour cells, is often a consequence of reduced intercellular adhesion. Recent reports have indicated that the primary cause for the 's ...
The loss of epithelial differentiation in carcinomas, which is accompanied by higher mobility and invasiveness of the tumour cells, is often a consequence of reduced intercellular adhesion. The primary cause of the "scattering" of cells in invasive carcino ...
Optical motion capture provides an impressive ability to replicate gestures. However, even with a highly professional system there are many instances where crucial markers are occluded or when the algorithm confuses the trajectory of one marker with that o ...
The effect of hydration on the mobility of polysaccharides in onion cell-wall material (CWM) was studied by solid-state NMR. The application of proton T-1 rho, carbon T-1 relaxation measurements, and 2D-WISE (wideline separation) experiments led to a coher ...
In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) based upon InAlAs/InGaAs heterostructures grown on InP substr ...
We consider the problem of multicast routing in a large single domain network with a very large number of multicast groups with small number of receivers. Such a case occurs, for example, when multicast addresses are statically allocated to mobile terminal ...
An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k > 0 for GaAs/AlGaAs MODFET's and k < 0 for Si-MOSFET's) of the low ...
