Concept

Gallium nitride

Related publications (618)

W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Frequency comb generation in the green using silicon nitride microresonators

Tobias Kippenberg, Michail Zervas, Nicolas Volet, Hairun Guo, Martin Hubert Peter Pfeiffer

Optical frequency combs enable precision measurements in fundamental physics and have been applied to a growing number of applications, such as molecular spectroscopy, LIDAR and atmospheric trace-gas sensing. In recent years, the generation of frequency co ...

Wiley-VCH Verlag Berlin2016

Technology of integrated self-aligned E/D-mode n(++)GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Nicolas Grandjean, Jean-François Carlin

We describe the technology and performance of integrated enhancement/depletion (E/D)-mode n(++) GaN/InAlN/AlN/GaN HEMTs with a self-aligned metal-oxide-semiconductor (MOS) gate structure. An identical starting epi-structure was used for both types of devic ...

Iop Publishing Ltd2016

Synthesis and Structure of Nitride-Bridged Uranium(III) Complexes

Rosario Scopelliti, Marinella Mazzanti, Lucile Sylvie Danielle Chatelain

The reduction of the nitride-bridged diuranium(IV) complex Cs[{U(OSi((OBu)-Bu-t)(3))(3)}(2)(mu-N)] affords the first example of a uranium nitride complex containing uranium in the +III oxidation state. Two nitride-bridged complexes containing the heteromet ...

American Chemical Society2016

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline silicon solar cells using micro-photoluminescence spectroscopy

Stefaan De Wolf, Johannes Peter Seif

We report and explain the photoluminescence (PL) spectra from crystalline silicon (c-Si) wafers passivated by hydrogenated amorphous silicon (a-Si:H) films under various measurement conditions, utilizing the different absorption coefficients and radiative ...

Elsevier Science Bv2016

Optical and transport properties of GaN/(Al,Ga)N heterostructures in prospect of infrared unipolar devices

Etienne François Olivier Giraud

Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...

EPFL2015

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Lorenzo Lugani

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Ultrafast spectroscopy of wide bandgap semiconductor nanostructures

Mehran Shahmohammadi

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

EPFL2015

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Elison de Nazareth Matioli

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

American Chemical Society2015

GaN-based photonic crystal cavities on silicon for visible and near infrared applications

Noelia Vico Triviño

Photonic crystal (PhC) cavities combine ultra-high quality (Q) factors with small mode volumes, resulting in an enhancement of the light-matter interaction at the nanoscale, which, beyond fundamental studies is advantageous for countless applications in ph ...

EPFL2015

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