Concept

Zen 2

Related publications (6)

System-Level Exploration of In-Package Wireless Communication for Multi-Chiplet Platforms

David Atienza Alonso, Marina Zapater Sancho, Giovanni Ansaloni, Rafael Medina Morillas, Joshua Alexander Harrison Klein

Multi-Chiplet architectures are being increasingly adopted to support the design of very large systems in a single package, facilitating the integration of heterogeneous components and improving manufacturing yield. However, chiplet-based solutions have to ...

2023

RPCValet: NI-Driven Tail-Aware Balancing of µs-Scale RPCs

Babak Falsafi, Alexandros Daglis, Mark Johnathon Sutherland

Modern online services come with stringent quality requirements in terms of response time tail latency. Because of their decomposition into fine-grained communicating software layers, a single user request fans out into a plethora of short, μs-scale RPCs, ...

ACM2019

Shared Frontend for Manycore Server Processors

Ilknur Cansu Kaynak

Instruction-supplymechanisms, namely the branch predictors and instruction prefetchers, exploit recurring control flow in an application to predict the applicationâs future control flow and provide the core with a useful instruction stream to execute in ...

EPFL2015

Thermal Characterization of Cloud Workloads on a Power-Efficient Server-on-Chip

Babak Falsafi, Pejman Lotfi Kamran, Andreas Panteli

We propose a power-efficient many-core server-on-chip system with 3D-stacked Wide I/O DRAM targeting cloud workloads in datacenters. The integration of 3D-stacked Wide I/O DRAM on top of a logic die increases available memory bandwidth by using dense and f ...

2012

Investigation of InGaN/GaN quantum wells for polariton laser diodes

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser, Munise Nevin Cobet

III-nitride based microcavities (MCs) appear as one of the most promising candidates for the realization of room temperature (RT) polariton laser diodes. The present work focuses on the properties of low In content InGaN/GaN multiple quantum wells (MQWs) i ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2012

On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch

Marcel Py

We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) a ...

Donecker, J; Rechenberg, I1998

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