Capacitor

Summary

A capacitor is a device that stores electrical energy in an electric field by accumulating electric charges on two closely spaced surfaces that are insulated from each other. It is a passive electronic component with two terminals. The effect of a capacitor is known as capacitance. While some capacitance exists between any two electrical conductors in proximity in a circuit, a capacitor is a component designed to add capacitance to a circuit. The capacitor was originally known as the condenser, a term still encountered in a few compound names, such as the condenser microphone. The physical form and construction of practical capacitors vary widely and many types of capacitor are in common use. Most capacitors contain at least two electrical conductors often in the form of metallic plates or surfaces separated by a dielectric medium. A conductor may be a foil, thin film, sintered bead of metal, or an electrolyte. The nonconducting dielectric acts to increase the capacitor's charge c

Official source

https://en.wikipedia.org/wiki/Capacitor

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22.6 A fully integrated counter-flow energy reservoir for 70%-efficient peak-power delivery in ultra-low-power systems

Yao Shi

Recent advances in circuits have enabled significant reduction in the size of wireless systems such as implantable biomedical devices. As a consequence, the battery integrated in these systems has also shrunk, resulting in high internal resistances (~10kΩ). However, the peak-current requirement of power-hungry components such as radios remains in the mW range, and hence cannot be directly supplied from the battery. Therefore, duty-cycled architectures such as pulsed-based radios have been proposed that transmit a short burst (~1μs) of high power (~10mW) supplied by an internal energy storage capacitor [1-3]. The capacitor is then recharged using a current limiter to protect the battery from excessive droop. This paradigm raises two challenges: 1) to supply sufficient energy, very large capacitance (>50nF) is often needed (200mV droop, for 10mW and 5μs), leading to large die area or bulky off-chip discrete components; 2) only a small fraction (~5%) of energy stored in the capacitor is actually delivered to the high power components since the capacitor can only be discharged by a few 100s of mV while maintaining proper circuit operation (Fig. 22.6.1).

IEEE2016

Thermodynamics of organic electrochemical transistors

Hsin Tseng

Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework that accurately models OECT operation. Despite their increasing usefulness in a wide variety of applications, organic electrochemical transistors still lack a comprehensive and unifying physical framework able to describe the current-voltage characteristics and the polymer/electrolyte interactions simultaneously. Building upon thermodynamic axioms, we present a quantitative analysis of the operation of organic electrochemical transistors. We reveal that the entropy of mixing is the main driving force behind the redox mechanism that rules the transfer properties of such devices in electrolytic environments. In the light of these findings, we show that traditional models used for organic electrochemical transistors, based on the theory of field-effect transistors, fall short as they treat the active material as a simple capacitor while ignoring the material properties and energetic interactions. Finally, by analyzing a large spectrum of solvents and device regimes, we quantify the entropic and enthalpic contributions and put forward an approach for targeted material design and device applications.

NATURE PORTFOLIO2022

Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric transducer, stabilizing the transmission at a given predetermined frequency. For reasons such as space economy in hand-held devices, it is of interest to make these TFBARs tunable, so that a single TFBAR is multi-band responsive. This thesis demonstrates for the first time electrically tunable, single-component TFBARs. A theory describing the tuning behavior of dc bias induced acoustic resonances was developed. Then we made the hypothesis that dc bias induced piezoelectric BaxSr1-xTiO3 (BST) thin films – namely, paraelectric, non-piezoelectric films operating under dc bias – can be used to make electrically tunable TFBARs and that the devices can be switched on or off depending on the dc bias state. The devices were then fabricated: We integrated BST lms onto silicon substrates, micromachined the substrate to create the TFBARs and a new type of suspended planar capacitor which were then characterized, analyzed, and modeled, demonstrating successfully the new concept: We developed a theory describing the electrical tuning behavior of the dc bias induced acoustic resonances in paraelectric thin lms in terms of material parameters. The field dependent constitutive piezoelectric equations were derived from the Landau free energy P-expansion by taking the linear and nonlinear electrostrictive terms as well as the background permittivity into account. We considered two modes of excitation for the tuning of the acoustic resonances, namely the thickness excitation (TE) mode and the lateral field excitation (LFE) mode. The tuning behavior of the two types of resonators based on BST thin films was modeled and discussed. For the modeling we calculated the relevant tensor components controlling the tuning of the BST resonators from the available literature data. The fabrication of the membrane-type TFBARs was realized by integrating BST thin films onto silicon substrates and using micromaching technologies. We showed that the developed TFBARs can be switched on or off with a dc bias. At a dc electric field of 615 kV/cm we observed a tuning of -2.4% (-66 MHz) and -0.6% (-16 MHz) for the resonance and antiresonance frequencies of the device, while the resonance frequency at a dc electric field extrapolated to 0 kV/cm was 2.85 GHz. The effective electromechanical coupling factor k2eff of the device increased up to 4.4%. The tuning was non-hysteretic. The Quality-factor (Q-factor) of the device was about 200. The developed micromaching processes for the TFBARs were used to fabricate coplanar BST capacitors on silicon. Micromaching was used to remove the Si substrate under the active area of the device. Comparing this new micromachined coplanar capacitor with conventional non-micromachined capacitors, we demonstrated that the removal of the substrate from the active device area resulted in a reduction of parasitic effects. The micromachined coplanar capacitor showed an increased tunability and a reduced loss tangent in comparison to the non-micromachined capacitor. The micromachined capacitor showed a relative tunability of 37% at a dc electric field of 1100 kV/cm. The loss tangent was 0.08 and 0.06 at zero and maximum dc bias, respectively, at a measurement frequency of 20 GHz. The integration of epitaxial BST thin films on silicon was studied as well because of its potential improvement of the device performance in comparison to devices based on polycrystalline films. Two different electrode/buffer layer systems, YBa2Cu3O7-x (YBCO) / CeO2 / YxZr1-xO2-x/2 (YSZ) and TiN were used for the integration. Epitaxial BST thin films were grown with both structures. For the BST / YBCO / CeO2 / YSZ / Si structure, the BST unit cell was rotated by 45° in the in-plane dimension with respect to the substrate. The BST layer exhibited good structural quality as indicated by a Full Width at Half Maximum (FWHM) of 0.5° of the rocking curve of the BST(002) diffraction peak. For the BST / TiN / Si structure, the BST layer was grown with a cube-on-cube epitaxial relationship on the silicon substrate, thus demonstrating epitaxially grown BST on silicon using conventional bottom electrode that is easily acceptable by the microelectronic industry. However, in this case, the structural quality of the BST layer was reduced in comparison to the BST / YBCO / CeO2 / YSZ / Si structure. The FWHM of the rocking curve of the BST(002) diffraction peak was 2.2°. We established the temperature (T=550 to 600 °C) and pressure (p ≈ 10-7 to 5 × 10-4 Torr) conditions for the growth of epitaxial BST thin films on TiN-buffered Si. At too high temperatures and/or oxygen pressures epitaxial BST thin film growth was impeded due to the oxidation of the TiN layer. By introducing experimental results from the electrical characterization of the micromachined devices with the polycrystalline BST into our developed theory, we could successfully model the tuning behavior of our fabricated TFBARs. The modeling allowed us to de-embed the intrinsic electromechanical properties of a freestanding BST layer. The effect of increasing mechanical load on the tuning performance of the device was modeled and studied experimentally. Under strong mechanical load, the tuning of both resonance and antiresonance frequency was reduced. The effect was attributed to a reduction in the tuning of k2eff of the device and of the sound velocity of the BST layer.

EPFL2009