Concept

Gain (antenna)

Related publications (83)

Scalable conformal array for multi-gigabit body centric wireless communication

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

In this work a conceptual design of a conformal antenna array is presented for a millimeter-wave antenna system, optimized for low-cost mass production in PCB technology. The conformal array is constituted by four cube faces with two antennas realized on e ...

2011

Design, Realization and Experimental Test of a Coaxial Exponential Transmission Line Adaptor for a Half Impulse Radiating Antenna

Nicolas Mora Parra

This paper describes the simulation, design, realization, and experimental test of a tapered transmission line (TL) for adapting a broad-band impulse generator to a radiating antenna, for a frequency range of 50 MHz-1 GHz. Two different taper geometries ar ...

2011

On Chip Plasmonic Monopole Nano-Antennas and Circuits

Hatice Altug

Analogues of many radio frequency (RF) antenna designs such as the half-wave dipole and Yagi-Uda have been successfully adapted to the optical frequency regime, opening the door for important advances in biosensing, photodetection, and emitter control. Exa ...

2011

Dual-pump push-pull polarization control using stimulated Brillouin scattering

Luc Thévenaz, Sang Hoon Chin, Nikolay Primerov

Stimulated Brillouin scattering (SBS) amplification of probe signals is highly polarization dependent. Maximum and minimum gain values are associated with a pair of orthogonal states of polarization (SOP), which are related to the pump SOP. Since the maxim ...

Optical Society of America2011

Halved Vivaldi Antenna With Reconfigurable Band Rejection

Julien Perruisseau-Carrier

This letter presents a Vivaldi antenna having the capability of dynamically rejecting interferers, mainly aiming at multistandard communication with dynamic frequencies allocation. Only half of the Vivaldi is used and placed over a ground plane, which is s ...

Institute of Electrical and Electronics Engineers2011

Polarization pulling based on stimulated Brillouin scattering in a dual-pump configuration

Luc Thévenaz, Sang Hoon Chin, Nikolay Primerov

Stimulated Brillouin scattering (SBS) amplification of probe signals is highly polarization dependent. Maximum and minimum gain values are associated with a pair of orthogonal states of polarization (SOP) at the fiber output. Since the maximum gain is much ...

SPIE2011

Implantable Antennas for Biomedical Applications

Francesco Merli

Since the introduction of implantable pacemakers in the early 1960s, implantable medical devices have become more and more interesting for healthcare services. Nowadays, the devices designed to monitor physiological data from inside the human body have gre ...

EPFL2011

Radiated Fields From Lightning Strikes to Tall Structures: Effect of Upward-Connecting Leader and Reflections at the Return Stroke Wavefront

Marcos Rubinstein, Davide Pavanello, Seyed Abbas Mosaddeghi

An extension of the engineering return-stroke models for lightning strikes to tall structures that takes into account the presence of possible reflections at the return-stroke wavefront and the presence of an upward-connecting leader is presented. Based on ...

Institute of Electrical and Electronics Engineers2011

Mode Control of 1.3 proportional to m Wavelength Coupled VCSEL Arrays by Cavity Structuring

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Elodie Lamothe, Lukas Mutter

Mode control in wafer-fused 1.3 mu m wavelength coupled-VCSEL arrays is achieved by cavity structuring and investigated by spectrally resolved near- and far-field measurements. Improved mode discrimination is attained by combining index- and gain-patternin ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

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