Monocrystalline siliconMonocrystalline silicon, more often called single-crystal silicon, in short mono c-Si or mono-Si, is the base material for silicon-based discrete components and integrated circuits used in virtually all modern electronic equipment. Mono-Si also serves as a photovoltaic, light-absorbing material in the manufacture of solar cells. It consists of silicon in which the crystal lattice of the entire solid is continuous, unbroken to its edges, and free of any grain boundaries (i.e. a single crystal).
ProtocrystallineA protocrystalline phase is a distinct phase occurring during crystal growth, which evolves into a microcrystalline form. The term is typically associated with silicon films in optical applications such as solar cells. Amorphous silicon (a-Si) is a popular solar cell material owing to its low cost and ease of production. Owing to disordered structure (Urbach tail), its absorption extends to the energies below the band gap resulting in a wide-range spectral response; however, it has a relatively low solar cell efficiency.
Solar cellA solar cell, or photovoltaic cell, is an electronic device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical phenomenon. It is a form of photoelectric cell, defined as a device whose electrical characteristics, such as current, voltage, or resistance, vary when exposed to light. Individual solar cell devices are often the electrical building blocks of photovoltaic modules, known colloquially as solar panels.
Growth of photovoltaicsBetween 1992 and 2022, the worldwide usage of photovoltaics (PV) increased exponentially. During this period, it evolved from a niche market of small-scale applications to a mainstream electricity source. When solar PV systems were first recognized as a promising renewable energy technology, subsidy programs, such as feed-in tariffs, were implemented by a number of governments in order to provide economic incentives for investments. For several years, growth was mainly driven by Japan and pioneering European countries.
Cadmium telluride photovoltaicsCadmium telluride (CdTe) photovoltaics is a photovoltaic (PV) technology based on the use of cadmium telluride in a thin semiconductor layer designed to absorb and convert sunlight into electricity. Cadmium telluride PV is the only thin film technology with lower costs than conventional solar cells made of crystalline silicon in multi-kilowatt systems. On a lifecycle basis, CdTe PV has the smallest carbon footprint, lowest water use and shortest energy payback time of any current photovoltaic technology.
Indium tin oxideIndium tin oxide (ITO) is a ternary composition of indium, tin and oxygen in varying proportions. Depending on the oxygen content, it can be described as either a ceramic or an alloy. Indium tin oxide is typically encountered as an oxygen-saturated composition with a formulation of 74% In, 18% Sn, and 8% O by weight. Oxygen-saturated compositions are so typical that unsaturated compositions are termed oxygen-deficient ITO. It is transparent and colorless in thin layers, while in bulk form it is yellowish to gray.
Copper indium gallium selenide solar cellA copper indium gallium selenide solar cell (or CIGS cell, sometimes CI(G)S or CIS cell) is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.
Quantum dot solar cellA quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s).
Electron mobilityIn solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .
Third-generation photovoltaic cellThird-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions ("first generation") and thin film cells ("second generation"). Common third-generation systems include multi-layer ("tandem") cells made of amorphous silicon or gallium arsenide, while more theoretical developments include frequency conversion, (i.e.
