Publications related to Quantum Hall effect

Multi-analysis and modeling of asymmetry offset for Hall effect structures

The topological (asymmetry) offset voltage of CMOS cross-like Hall cells is analyzed in this paper. In order to attain the stated objective, different approaches have been considered. Both circuit and three-dimensional models have been developed. Variation ...

Elsevier Science Bv2017

Anomalous Nernst effect in Ir22Mn78/Co20Fe60B20/MgO layers with perpendicular magnetic anisotropy

Jean-Philippe Ansermet, Haiming Yu, Sa Tu, Junfeng Hu, Jianyu Zhang, Yao Zhang, Xiangrong Wang

The anomalous Nernst effect in a perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO thin film is measured using well-defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 mu V/K at room temperature, which is almost 50 times ...

American Institute of Physics2017

A multi-scale based cohesive zone model for the analysis of thickness scaling effect in fiber bridging

John Botsis, Luis Pablo Canal Casado

A cohesive zone model (CZM) is proposed to assess the thickness scaling effect associated with fiber bridging during fracture. The CZM was developed through a multi-scale simulation approach and utilizes an embedded cell model of the Double Cantilever Beam ...

Elsevier2017

Intense fluorescence of Au-20

Harald Brune, Wolfgang Harbich, Chongqi Yu

Ligand-protected Au clusters are non-bleaching fluorescence markers in bio- and medical applications. Here we show that their fluorescence can be an intrinsic property of the Au cluster itself. We find a very intense and sharp fluorescence peak located at ...

American Institute of Physics2017

Haldane quantum Hall effect for light in a dynamically modulated array of resonators

Vincenzo Savona, Momchil Minkov

Topological insulators have attracted abundant attention for a variety of reasons-notably, the possibility for lossless energy transport through edge states "protected" against disorder. Topological effects such as the quantum Hall state can be induced thr ...

Optical Soc Amer2016

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Switching behavior in electron-hole bilayer tunnel FETs is known to be unaffected by the subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the band-to-band tunneling phenomena on which they rely. However, in this paper, we ...

Institute of Electrical and Electronics Engineers2016

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Magneto-ballistic transport in GaN nanowires

Elison de Nazareth Matioli, Dmitry Ovchinnikov, Adrien Victor Allain, Giovanni Santoruvo

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons wa ...

American Institute of Physics2016

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Quantum Hall effect

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Multi-analysis and modeling of asymmetry offset for Hall effect structures

Anomalous Nernst effect in Ir22Mn78/Co20Fe60B20/MgO layers with perpendicular magnetic anisotropy

A multi-scale based cohesive zone model for the analysis of thickness scaling effect in fiber bridging

Intense fluorescence of Au-20

Haldane quantum Hall effect for light in a dynamically modulated array of resonators

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Magneto-ballistic transport in GaN nanowires

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

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Chat with Graph Search

A multi-scale based cohesive zone model for the analysis of thickness scaling effect in fiber bridging

Multi-analysis and modeling of asymmetry offset for Hall effect structures

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Anomalous Nernst effect in Ir22Mn78/Co20Fe60B20/MgO layers with perpendicular magnetic anisotropy

Intense fluorescence of Au-20

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Haldane quantum Hall effect for light in a dynamically modulated array of resonators

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

Magneto-ballistic transport in GaN nanowires