Silicon nanowire

Related publications (193)

Self-Checking Ripple-Carry Adder with Ambipolar Silicon Nanowire FET

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Ogün Türkyilmaz

For the rapid adoption of new and aggressive technologies such as ambipolar Silicon NanoWire (SiNW), addressing fault-tolerance is necessary. Traditionally, transient fault detection implies large hardware overhead or performance decrease compared to perma ...

2013

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Esther Alarcon Llado, Sonia Conesa Boj

Thanks to their wide band structure tunability, GaAs1-xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their ...

Institute of Physics2013

We study the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with aluminum as catalyst. We show that for a growth temperature of 600 °C, the silicon precursor partial pressure (SiH 4 in this study) is a key parameter for controlling ...

2012

Hidden defects in silicon nanowires

Cyril Cayron

Recent publications have reported the presence of hexagonal phases in Si nanowires. Most of these reports were based on 'odd' diffraction patterns and HRTEM images - 'odd' means that these images and diffraction patterns could not be obtained on perfect si ...

2012

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Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

American Chemical Society2012

Pressure Tuning of the Optical Properties of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of t ...

American Chemical Society2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Uniform, 2 nm diameter gold nanowires were synthesized through the reduction of gold(III) chloride in an oleylamine matrix. They were top-contacted on a Si/SiO2 substrate with metallic electrodes to manufacture back-gated transistors. Due to thermal breaka ...

2012

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Vladimir Dubrovskii, Lorenzo Lugani

Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire gr ...

2012

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Mihai Adrian Ionescu, Jean-Michel Sallese, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Elsevier2012