Silicon nanowire

Related publications (193)

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Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was not possible before with thin film technology. In turn, this opens new avenues for applications in the areas of energy harvesting, electronics, and optoele ...

American Chemical Society2014

Thermal diffusivity measurements of templated nanocomposite using infrared thermography

Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Manish Sharma

Electrodeposited bismuth telluride (Bi2Te3) nanowires using anodic alumina (AAO) templates show anisotropic thermal properties in a direction parallel and perpendicular to the nanowire/nanochannel axis. The present study reports thermal diffusivity measure ...

Elsevier Science Bv2014

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Sonia Conesa Boj

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

American Chemical Society2014

We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 mu m. The SiNW-ISFE ...

Myu, Scientific Publishing Division2013

A micro-power energy harvesting system based on core(crystalline Si)-shell(amorphous Si) nanowire solar cells together with a nanowire-modified CMOS sensing platform have been developed to be used in a dust-sized autonomous chemical sensor node. The mote ( ...

Spie-Int Soc Optical Engineering2013

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This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMO ...

2013

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...

Elsevier2013

Silicon nanowires reliability and robustness investigation using AFM-based techniques

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

Silicon nanowires (SiNWs) have undergone intensive research for their application in novel integrated systems such as field effect transistor (FET) biosensors and mass sensing resonators profiting from large surface-to-volume ratios (nano dimensions). Such ...

2013

The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapo ...

American Institute of Physics2013

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Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Inderscience2013