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Silicon nanowire

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Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Monolithic technology for silicon nanowires in high-topography architectures

Yusuf Leblebici, Mohammad Nasr Esfahani, Mustafa Yilmaz

Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to th ...

Elsevier2017

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Youri Louis Winandus Van Hees

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on ( ...

American Chemical Society2017

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Gözde Tütüncüoglu

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Amer Chemical Soc2017

Vectorial scanning force microscopy using a nanowire sensor

Anna Fontcuberta i Morral, Nicola Rossi

Self-assembled nanowire (NW) crystals can be grown into nearly defect-free nanomechanical resonators with exceptional properties, including small motional mass, high resonant frequency and low dissipation. Furthermore, by virtue of slight asymmetries in ge ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization

Anna Murello

Cell-cell and cell-matrix interactions are essential to the survival and proliferation of most cells, and are responsible for triggering a wide range of biochemical pathways. More recently, the biomechanical role of those interactions was highlighted, show ...

Iop Publishing Ltd2017

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Plasmonic Waveguide-Integrated Nanowire Laser

Anna Fontcuberta i Morral, Gözde Tütüncüoglu

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitiv ...

American Chemical Society2017

Multi-scale integration remains the primary challenge in the fabrication of miniature piezoresistive sensors, as the co-fabrication of a silicon nanowire along with a microscale shuttle is the main architecture facilitating high-sensitivity transduction. T ...

Institute of Electrical and Electronics Engineers2017

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EPFL2017

Institute of Electrical and Electronics Engineers2017

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

A Monolithic Approach to Downscaling Silicon Piezoresistive Sensors

Yusuf Leblebici

Mohammad Nasr Esfahani

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Youri Louis Winandus Van Hees

American Chemical Society2017