Silicon nanowire

Related publications (193)

Does desorption affect the length distributions of nanowires?

Anna Fontcuberta i Morral, Wonjong Kim, Vladimir Dubrovskii, Jelena Vukajlovic Plestina

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric le ...

2019

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III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

2019

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspec ...

AMER CHEMICAL SOC2019

Mechanisms shifting the emission energy of self-assembled quantum dots in nanowires

Luca Francaviglia

This thesis is dedicated to the engineering of the emission energy of quantum dots embedded in core-shell GaAs-AlGaAs nanowires. The goal is to redshift the quantum-dot emission energy in resonance with a gas of Rb atoms. Segregation processes on the nanow ...

EPFL2019

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Over the past 20 years, nanomaterials, such as quantum dots, nanoparticles, nanowires(NWs), nanotubes, and graphene, have received enormous attention due to their suitable properties for designing novel nanoscale biosensors. Nanomaterials are very small st ...

Elsevier2018

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Davide Sacchetto, Yusuf Leblebici, Oliver Peric, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Controlled deposition of titanium oxide overcoats by non-hydrolytic sol gel for improved catalyst selectivity and stability

Jeremy Luterbacher, Florent Emmanuel Héroguel, Yuan-Peng Du, Luca Silvioli

Advances in the synthetic control of surface nanostructures could improve the activity, selectivity and stability of heterogeneous catalysts. Here, we present a technique for the controlled deposition of TiO2 overcoats based on non-hydrolytic sol-gel chemi ...

Elsevier2018

Coherent Dynamics of Nanowire Force Sensors

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Nicola Rossi

We describe the use of grown nanowires as scanning directional force sensors. Two orthogonal flexural modes are used to demonstrate vectorial sensing of electric and magnetic fields. Furthermore, we show that the modes can be strongly coupled by demonstrat ...

IEEE2018

Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors

Arnout Lodewijk M Beckers

This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire o ...

AMER INST PHYSICS2018

This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insu ...

2017