Publications related to Current mirror

The OPEP protein model: from single molecules, amyloid formation, crowding and hydrodynamics to DNA/RNA systems

The OPEP coarse-grained protein model has been applied to a wide range of applications since its first release 15 years ago. The model, which combines energetic and structural accuracy and chemical specificity, allows the study of single protein properties ...

Royal Society of Chemistry2014

Tandem and Multiple-junction Devices Based on Thin-film Silicon Technology

Christophe Ballif, Mathieu Gérard Boccard, Grégory Bugnon, Karin Söderström

This book chapter presents an overview of thin-film silicon (both amorphous and microcrystalline) technology and its application to the fabrication of tandem and multiple-junction solar cells. It reviews the material relevant properties for this applicatio ...

Royal Society of Chemistry Publishing2014

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics

Nicolas Grandjean, Jean-François Carlin, Lorenzo Lugani

Lattice matched 0.25-mu m gatelength InAlN/GaN high electron mobility transistors are realized in an ultrathin body mesa technology (50-nm AlN nucleation layer/50-nm GaN buffer) on sapphire. At room temperature, the maximum output current density is I-DS = ...

Ieee-Inst Electrical Electronics Engineers Inc2013

GaN-on-insulator technology for high-temperature electronics beyond 400 degrees C

Nicolas Grandjean, Jean-François Carlin, Lorenzo Lugani

Lattice-matched InAlN/GaN high electron mobility transistors (HEMTs) have been prepared in a silicon-on-insulator (SOI)-like configuration. Here, this implies an ultrathin body 50 nm GaN channel/50 nm AlN nucleation layer material structure on sapphire wit ...

Iop Publishing Ltd2013

Temperature considerations on Hall Effect sensors current-related sensitivity behaviour

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

The present paper focuses on evaluating the temperature effects on Hall Effect sensors sensitivity behavior. To this purpose, an analysis of the factors affecting the sensors current-related sensitivity is performed, consisting of several pertinent conside ...

Springer US2013

Smoothening intermediate reflecting layer for tandem thin-film silicon solar cells

Christophe Ballif, Corsin Battaglia, Nicolas Blondiaux, Matthieu Despeisse, Mathieu Gérard Boccard

We introduce the concept of smoothening intermediate reflecting layers (IRLs) in Micromorph thin-film silicon tandem solar cells in the superstrate configuration. The aim of such structures is not only to provide a selective reflection of light for optimal ...

Elsevier2013

Low Leakage Normally-off Tri-gate GaN MISFET

Elison de Nazareth Matioli, Bin Lu

A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-stat ...

Ieee2012

Accelerating Range Queries For Brain Simulations

Anastasia Ailamaki, Henry Markram, Felix Schürmann, Thomas Heinis, Farhan Tauheed, Laurynas Biveinis

Neuroscientists increasingly use computational tools to build and simulate models of the brain. The amounts of data involved in these simulations are immense and the importance of their efficient management is primordial. One particular problem in analyzin ...

2012

Tri-Gate Normally-Off GaN Power MISFET

Elison de Nazareth Matioli, Bin Lu

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Current mirror

The OPEP protein model: from single molecules, amyloid formation, crowding and hydrodynamics to DNA/RNA systems

Tandem and Multiple-junction Devices Based on Thin-film Silicon Technology

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics

GaN-on-insulator technology for high-temperature electronics beyond 400 degrees C

Temperature considerations on Hall Effect sensors current-related sensitivity behaviour

Smoothening intermediate reflecting layer for tandem thin-film silicon solar cells

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Low Leakage Normally-off Tri-gate GaN MISFET

Accelerating Range Queries For Brain Simulations

Tri-Gate Normally-Off GaN Power MISFET

Graph Chatbot

Chat with Graph Search

Tandem and Multiple-junction Devices Based on Thin-film Silicon Technology

The OPEP protein model: from single molecules, amyloid formation, crowding and hydrodynamics to DNA/RNA systems

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics

Smoothening intermediate reflecting layer for tandem thin-film silicon solar cells

GaN-on-insulator technology for high-temperature electronics beyond 400 degrees C

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Low Leakage Normally-off Tri-gate GaN MISFET

Temperature considerations on Hall Effect sensors current-related sensitivity behaviour

Accelerating Range Queries For Brain Simulations

Tri-Gate Normally-Off GaN Power MISFET