Concept
Logic level
Related publications (32)
A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power
Alexandre Schmid, Mehdi Saberi
This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...
New York2023Towards Single Photon Detection with Amorphous Silicon Based Microchannel Plates
Janina Christine Isabelle Löffler
An exciting new approach for microchannel plate (MCP) detectors could help make them suitable for single photon detection. State-of-the-art clean room technology allows amorphous silicon based microchannel plates (AMCPs) to take a variety of shapes. This v ...
EPFL2021A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino
InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...
NATURE RESEARCH2021Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei
HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...
AMER INST PHYSICS2021A Deeper Look at the Energy Consumption of Lightweight Block Ciphers
Francesco Regazzoni, Subhadeep Banik, Muhammed Fatih Balli, Andrea Felice Caforio
In the last few years, the field of lightweight cryptography has seen an influx in the number of block ciphers and hash functions being proposed. In the past there have been numerous papers that have looked at circuit level implementation of block ciphers ...
IEEE2021Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic
Giovanni De Micheli, Mathias Soeken, Eleonora Testa, Odysseas Zografos
Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...
2020Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic
Giovanni De Micheli, Mathias Soeken, Eleonora Testa, Odysseas Zografos
Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...
IEEE2020Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi
HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...
AMER INST PHYSICS2020RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM
Alexandre Sébastien Julien Levisse
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes. Fast and accurate architectural ...
2019RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM
Alexandre Sébastien Julien Levisse
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes. Fast and accurate architectural ...
2019