Concept

P–n junction

Related publications (320)

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Igor Stolichnov, Anna Krammer, Teodor Rosca, Emanuele Andrea Casu, Chen Yan, Nicolò Oliva

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

2017

Synthesis of Cyanine Polyelectrolytes and Anions for Organic Electronic Devices

Lei Wang

Many practical applications among organic electronic devices have been demonstrated over the last decades. They are considered as promising alternatives to inorganic semiconductor technologies due to the potential of cost-effective fabrication, excellent p ...

EPFL2017

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

Christophe Ballif, Antoine Descoeudres, Matthieu Despeisse, Loris Barraud, Stephanie Essig

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked su ...

Nature Publishing Group2017

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Bertrand Yves Paul Paviet-Salomon, Florent Sahli, Matthieu Despeisse, Stefaan De Wolf, Sylvain Nicolay, Björn Niesen, Loris Barraud, Jérémie Werner, Johannes Peter Seif, Matthias Wolfgang Bräuninger, Raphaël Monnard, Andrea Tomasi

Perovskite/silicon tandem solar cells are increasingly recognized as promi-sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely ...

2017

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

Marco Negri

Silicon carbide thin films were synthesised by vapour phase epitaxy technique on silicon substrates using silane and propane as precursors. Methyltrichlorosilane (MTS) was added, and nitrogen was used as dopant precursor. Samples with different doping conc ...

Springer2017

Three-Dimensionally Enlarged Photoelectrodes by a Protogenetic Inclusion of Vertically Aligned Carbon Nanotubes into CH3NH3PbBr3 Single Crystals

László Forró, Endre Horvath, Andrzej Sienkiewicz, Xavier François Mettan, Bálint Náfrádi, Márton Kollár, Pavao Roko Andricevic, Klara Hernadi

We demonstrate that single crystals of methylammonium lead bromide (MAPbBr(3)) could be grown directly on vertically aligned carbon nanotube (VACNT) forests. The fast-growing MAPbBr3 single crystals engulfed the protogenetic inclusions in the form of indiv ...

Amer Chemical Soc2017

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Dmitry Mikulik, Gözde Tütüncüoglu, Jelena Vukajlovic Plestina, Maria Ricci, Natasa Vulic

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

2017

Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

Christophe Ballif, Franz-Josef Haug, Antoine Descoeudres, Jacques Levrat, Matthieu Despeisse, Stefaan De Wolf, Eiji Kobayashi

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells incre ...

Elsevier Science Bv2017

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