Concept

Luminescence

Related publications (100)

Luminescence of ion-pair and spin-excited states of I2 in solid xenon

We report UV and visible mol. ion-pair emission upon 193 nm excitation of I2 in solid xenon. By comparison to mol. emission obsd. in Kr matrixes, it is assigned to the d(2u)->2g (I*+I) and d(2u)->2g (I+I) transitions. The solvation energy of this charge tr ...

2001

Microlens systems for fluorescence detection in chemical microsystems

Nico de Rooij, Hans Peter Herzig, René Dändliker

Micro-optical systems based on refractive microlenses are investigated. These systems are integrated on a chemical chip. They focus an excitation beam into the detection volume (microliter or even submicroliter scale) and collect the emitted light from flu ...

2001

Microlens systems for fluorescence detection in chemical microsystems

Nico de Rooij, Hans Peter Herzig, René Dändliker

2001

Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation

Jean-Daniel Ganière, Klaus Leifer

In situ cathodoluminescence experiments have been performed to follow the time dependence of the UV luminescence in epitaxial lateral overgrowth GaN specimens. The decrease of the observed intensity and red-shift of the UV peak are interpreted in terms of ...

2000

Photoluminescence study of V-groove quantum wires: The influence of disorder on the optical spectra and the carrier thermalization

Elyahou Kapon, Benoît Marie Joseph Deveaud, Daniel Oberli

We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8 to 200 It. We evaluate the relation between phot ...

2000

Temperature quenching of photoluminescence intensities in undoped and doped GaN

Nicolas Grandjean

This work discusses the temperature behavior of the various photoluminescence (PL) transitions observed in undoped, n- and p-doped GaN in the 9-300 K range. Samples grown using different techniques have been assessed. When possible, simple rate equations a ...

1999

Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

Nicolas Grandjean

AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, ...

1999

GaN on Si(111): From growth optimization to optical properties of quantum well structures

Nicolas Grandjean

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflectio ...

1999

Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

Nicolas Grandjean

Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxG ...

1999

X-trap influence on luminescence and electric properties of C-60 single crystal

Giorgio Margaritondo, Helmuth Berger

This paper is devoted to investigation of luminescence and some electric properties of C-60 single crystal and their connection with X-traps model. Luminescence properties for C-60 single crystal, the temperature dependence of the luminescence spectra and ...

1998

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