Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxGa1-xN(0
Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Mehran Shahmohammadi, Lise Lahourcade
Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade